JAN1N6116US

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Transient voltage suppressors (TVS) are commonly used in consumer electronic devices to protect against transient, or spikes, in voltage. This is achieved by employing diodes, which are designed to allow a current to flow in one direction only. The JAN1N6116US diode is one such TVS diode that is designed to protect against voltage transients from 20 - 50V.

The JAN1N6116US is a relatively small silicon diode, manufactured by ON Semiconductor. It is an unidirectional TVS diode that is designed to protect circuits from overvoltage transients, and has an operating temperature range of -65°C to +150°C. The JAN1N6116US is also RoHS compliant.

In operation, the diode acts as a voltage-programmable-avalanche device. This means that a current transfers through the diode only if the voltage across it exceeds the avalanche breakdown voltage of the device. The device has a maximum reverse stand-off voltage (VBR) of 49V, with a breakdown voltage range of 28-52V. The JAN1N6116US can handle peak-to-peak pulses up to 1 KV, and has a peak pulse power dissipation of 6.1KW.

The JAN1N6116US also has a number of features that make it an ideal solution for use in consumer electronics. Firstly, the device is designed to withstand high energy transients without false triggering or latch-up. Additionally, the device has a very low clamping voltage, which makes it well-suited for use in low-voltage applications. Finally, the device has a high surge capability and can be used to protect against surges up to 1000V.

The JAN1N6116US is a useful tool for protecting sensitive electronic components from voltage transients, surges, and overvoltage conditions. The device offers a wide dynamic range for protection, and is designed to withstand high peak power transients without triggering. This makes the JAN1N6116US a useful component for protecting electronic circuits from voltage fluctuations.

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