JAN1N6144US Allicdata Electronics

JAN1N6144US Circuit Protection

Allicdata Part #:

1086-19605-ND

Manufacturer Part#:

JAN1N6144US

Price: $ 15.06
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 9.1V 17.75V C SQ-MELF
More Detail: N/A
DataSheet: JAN1N6144US datasheetJAN1N6144US Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
100 +: $ 13.68670
Stock 1000Can Ship Immediately
$ 15.06
Specifications
Series: Military, MIL-PRF-19500/516
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 9.1V
Voltage - Breakdown (Min): 10.83V
Voltage - Clamping (Max) @ Ipp: 17.75V
Current - Peak Pulse (10/1000µs): 84.36A
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: --
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, C
Supplier Device Package: C, SQ-MELF
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS - Diodes: JAN1N6144US application field and working principle.

TVS-diodes, also known as Transient Voltage Suppression Diodes, are high-speed semiconductor devices used to protect circuits from transients and other transient voltages induced by lightning, electrostatic charge, or electrical faults. They are designed to limit peak current and voltage levels that can cause damage to sensitive equipment. The JAN1N6144US is an example of a TVS diode, and this article will discuss its application field and working principle.

Application Field

The JAN1N6144US is commonly used in power converters and generators, and is an ideal choice for designers looking for a reliable and economical over-voltage protection solution. It features a dual-silicone construction that makes it suitable for 5V to 36V input systems. It has a very fast response time and excellent surge capability. It also offers good ESD protection with 700W peak pulse power, and can handle pulse currents up to 5A. As a result, the JAN1N6144US is well-suited for applications requiring fast transients and high surge capability. It is also a suitable choice for usage in sub-assemblies and PC boards.

Working Principle

At its most basic level, the JAN1N6144US works by clamping the voltage between its anode and cathode terminals when an over-voltage is detected. It is designed with two parallel silicon diodes that share the same doping and cutting process. Its circuitry is embedded in a monolithic dual-silicone substrate, which provides excellent performance, low thermal resistance and high ESD protection. To ensure these features, the substrate is moulded with a specially designed coating to further minimise the thermal resistance and achieve the desired electrical characteristics.

When an over-voltage occurs, the first diode experiences a forward bias, causing a voltage drop across the diode. This in turn, triggers the second diode, resulting in a clamping of the voltage between the anode and cathode terminals. This clamping of voltage limits further increases of voltage, mitigating any damage to the protected circuit. A zener diode is also present to increase the clamping voltage of the JAN1N6144US, increasing its tolerance to transients and surges. This is because the zener diode clamps the voltage of the positive terminal, preventing any further rise of the voltage.

Conclusion

The JAN1N6144US is an example of a TVS diode used to protect circuits from transients and other transient voltages induced by lightning, electrostatic charge, or electrical faults. It is commonly used in power converters and generators and features a dual-silicone construction that makes it suitable for 5V to 36V input systems. Its working principle involves the triggering of two parallel silicon diodes and the clamping of the voltage between the anode and cathode terminals. As a result of its fast response time and excellent surge capability, the JAN1N6144US is an ideal choice for designers looking for a reliable and economical over-voltage protection solution.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "JAN1" Included word is 40
Part Number Manufacturer Price Quantity Description
JAN1N6104US Microsemi Co... 0.0 $ 1000 TVS DIODE 6.2V 12.71V B S...
JAN1N6105US Microsemi Co... 0.0 $ 1000 TVS DIODE 6.9V 14.07V B S...
JAN1N6109US Microsemi Co... 0.0 $ 1000 TVS DIODE 9.9V 19.11V B S...
JAN1N6112US Microsemi Co... 0.0 $ 1000 TVS DIODE 13.7V 26.36V B ...
JAN1N6113AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 15.2V 27.7V B S...
JAN1N6115US Microsemi Co... 0.0 $ 1000 TVS DIODE 18.2V 34.97V B ...
JAN1N6116US Microsemi Co... 0.0 $ 1000 TVS DIODE 20.6V 39.27V B ...
JAN1N6129A Microsemi Co... 0.0 $ 1000 TVS DIODE 69.2V 125.1V AX...
JAN1N6139A Microsemi Co... 0.0 $ 1000 TVS DIODE 5.7V 11.2V C AX...
JAN1N6149A Microsemi Co... 0.0 $ 1000 TVS DIODE 15.2V 27.7V C A...
JAN1N6158A Microsemi Co... 0.0 $ 1000 TVS DIODE 35.8V 64.6V C A...
JAN1N6163A Microsemi Co... 0.0 $ 1000 TVS DIODE 56V 103.1V C AX...
JAN1N6172A Microsemi Co... 0.0 $ 1000 TVS DIODE 136.8V 245.7V C...
JAN1N6466 Microsemi Co... 0.0 $ 1000 TVS DIODE 30.5V 47.5V AXI...
JAN1N6466US Microsemi Co... 0.0 $ 1000 TVS DIODE 30.5V 47.5V B S...
JAN1N6467 Microsemi Co... 0.0 $ 1000 TVS DIODE 40.3V 63.5V AXI...
JAN1N6467US Microsemi Co... 0.0 $ 1000 TVS DIODE 40.3V 63.5V B S...
JAN1N6469 Microsemi Co... 0.0 $ 1000 TVS DIODE 5V 9V AXIAL
JAN1N6469US Microsemi Co... 0.0 $ 1000 TVS DIODE 5V 9V GMELF
JAN1N6474 Microsemi Co... 0.0 $ 1000 TVS DIODE 30.5V 47.5V AXI...
JAN1N6164A Microsemi Co... 15.04 $ 1000 TVS DIODE 62.2V 112.8V C ...
JAN1N6165A Microsemi Co... 15.04 $ 1000 TVS DIODE 69.2V 125.1V C ...
JAN1N6166A Microsemi Co... 15.04 $ 1000 TVS DIODE 76V 137.6V C AX...
JAN1N6167A Microsemi Co... 15.04 $ 1000 TVS DIODE 86.6V 151.3V C ...
JAN1N6168A Microsemi Co... 15.04 $ 1000 TVS DIODE 91.2V 165.1V C ...
JAN1N6169A Microsemi Co... 15.04 $ 1000 TVS DIODE 98.8V 178.8V C ...
JAN1N6171A Microsemi Co... 15.04 $ 1000 TVS DIODE 121.6V 218.4V C...
JAN1N6173A Microsemi Co... 15.04 $ 1000 TVS DIODE 152V 273V C AXI...
JAN1N6142US Microsemi Co... 15.06 $ 1000 TVS DIODE 7.6V 15.23V C S...
JAN1N6143AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 8.4V 15.6V C SQ...
JAN1N6143US Microsemi Co... 15.06 $ 1000 TVS DIODE 8.4V 16.38V C S...
JAN1N6144AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 9.1V 16.9V C SQ...
JAN1N6144US Microsemi Co... 15.06 $ 1000 TVS DIODE 9.1V 17.75V C S...
JAN1N6145AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 9.9V 18.2V C SQ...
JAN1N6145US Microsemi Co... 15.06 $ 1000 TVS DIODE 9.9V 19.11V C S...
JAN1N6146AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 11.4V 21V C SQ-...
JAN1N6146US Microsemi Co... 15.06 $ 1000 TVS DIODE 11.4V 22.05V C ...
JAN1N6147AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 12.2V 22.3V C S...
JAN1N6147US Microsemi Co... 15.06 $ 1000 TVS DIODE 12.2V 23.42V C ...
JAN1N6148AUS Microsemi Co... 15.06 $ 1000 TVS DIODE 13.7V 25.1V C S...
Latest Products
SMCJ6053/TR13

TVS DIODE 31V 56.4V DO214AB

SMCJ6053/TR13 Allicdata Electronics
VTVS8V5GSMF-HM3-18

TVS DIODE 8.5V 13.5V DO219AB

VTVS8V5GSMF-HM3-18 Allicdata Electronics
MRT100KP350CAE3

TVS DIODE 350V 690V CASE 5A

MRT100KP350CAE3 Allicdata Electronics
MRT100KP170CA

TVS DIODE 170V 334V CASE 5A

MRT100KP170CA Allicdata Electronics
MP6KE8.2AE3

TVS DIODE 7.02V 12.1V T-18

MP6KE8.2AE3 Allicdata Electronics
MP5KE78AE3

TVS DIODE 78V 126V DO204AL

MP5KE78AE3 Allicdata Electronics