JAN1N6166A Circuit Protection

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

JAN1N6166A is a SURFACE MOUNT silicon Avalanche Diode used for Transient Voltage Suppression (TVS). It consists of two discrete Thyristors of opposite stable states each triggering on below its breakdown voltage. This device has the ability to protect a wide range of delicate electric and electronic systems from voltage spikes caused by ESD, lightning, electrical short, etc.

In the field of TVS - Diodes, JAN1N6166A is widely used for ESD Protection in computer peripherals, communication and consumer electronics. The device can easily be integrated into the circuit of the device to protect it from voltage spikes and ESD events. The working principle of this diode is similar to that of its predecessor, the PN-junction diode, except that it operates in avalanche mode where carriers generated due to the application of an Reverse voltage are increased exponentially instead of linearly as in the PN-junction.

The JAN1N6166A diode is designed with a special design in order to achieve high peak pulse current capability (Ipp) and low reverse leakage current (IR). These two performance parameters are key to provide an efficient protection of the electronic device from voltage transients and ESD events. The Ipp of the JAN1N6166A is typically 1.5 Amps when operating at an ambient temperature of 25 0C and it can be increased up to 50A when operating at elevated temperatures.

The reverse leakage current of the diode is also very low, typically <5nA. This ensures good protection from repeated ESD events, especially at high temperatures. Furthermore, the diode also offers great protection from surges caused by lightning. The working principle of JAN1N6166A involves the breakdown of the avalanche breakdown voltage (VBR). The VBR is the voltage at which the avalanche effect is initiated. This helps in reducing the energy of the transient voltage due to its very fast switching action. In addition, the device also operates in a thermal closure mode which helps to protect the system from excessive power dissipation.

In conclusion, JAN1N6166A is an advanced TVS diode designed to protect electronic devices and systems from various transients such as ESD, lightning, and electrical shorts. This diode is designed to provide high peak pulse current capability and low reverse leakage current, this helps to provide very high levels of transient voltage protection. Moreover, the thermal closure mode of operation makes it even more efficient as it helps to protect the system from excessive power dissipation.

The specific data is subject to PDF, and the above content is for reference