JAN1N6466US Circuit Protection |
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Allicdata Part #: | 1086-2277-ND |
Manufacturer Part#: |
JAN1N6466US |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 30.5V 47.5V B SQ-MELF |
More Detail: | N/A |
DataSheet: | JAN1N6466US Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/551 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Discontinued at Digi-Key |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Unidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 30.5V |
Voltage - Breakdown (Min): | 33V |
Voltage - Clamping (Max) @ Ipp: | 47.5V |
Current - Peak Pulse (10/1000µs): | 63A (8/20µs) |
Power - Peak Pulse: | 500W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
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JAN1N6466US is a unidirectional, high-surge, surface mount, Transient Voltage Suppressor (TVS) Diode. This diode is designed to protect sensitive electronic components from damage due to over-voltage transients. It is constructed with a silicon body, ancillary polymer passivated chip, and a ceramic body. It is widely used in automotive, appliance, industrial, telecom, and consumer electronics applications.
JAN1N6466US Application Field and Working Principle
The JAN1N6466US diode finds widespread application in transient voltage protection of sensitive electronics such as data lines, signal control circuits, power supply circuits, and AC/DC converters. It has a peak pulse power dissipation of 600 watts and a peak non-repetitive surge current of 22 kiloamperes.
The JAN1N6466US diode works on the principle of a p-n junction. When an electric field is applied across the junction, a built-in electrostatic capacity is established. This capacity contains the applied electric field and limits the current flow from one side to the other. This characteristic is known as the breakdown voltage and is usually between 5 to 14 Volts. When the applied reverse voltage exceeds the breakdown voltage, it triggers the avalanche effect causing a surge current flow. This current is then dissipated as heat. The JAN1N6466US diode also contains a transient surge suppression device, which limits the surge current.
Input signals and shocks of voltage that are below the diode\'s breakover voltage, will have no effect on the circuit since the diode will not turn on. The application of a voltage above the diode\'s breakover voltage, causes it to turn on quickly and conduct the circuit.
The JAN1N6466US diode is an ideal choice for many emergency and power input protection applications. It helps protect sensitive and vital monitoring circuits from high electrostatic voltages or lightning strikes. It is fast and reliable, allowing short circuit current to pass through without any damage. This diode also ensures high reliability and a long operating life.
This diode offers numerous advantages such as compatibility with standard surface mount technology, lower heat generation, higher peak pulse current capabilities, and a wide operating temperature range. It is also available in a wide variety of packages, such as flat chip, SOT, DPAK, PTV, Emoner, and electronics. It is widely used in automotive, appliance, industrial, telecom, and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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