JAN1N6146US Circuit Protection |
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Allicdata Part #: | 1086-19619-ND |
Manufacturer Part#: |
JAN1N6146US |
Price: | $ 15.06 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 11.4V 22.05V C SQ-MELF |
More Detail: | N/A |
DataSheet: | JAN1N6146US Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 13.68670 |
Series: | Military, MIL-PRF-19500/516 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 11.4V |
Voltage - Breakdown (Min): | 13.54V |
Voltage - Clamping (Max) @ Ipp: | 22.05V |
Current - Peak Pulse (10/1000µs): | 67.83A |
Power - Peak Pulse: | 1500W (1.5kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, C |
Supplier Device Package: | C, SQ-MELF |
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TVS - Diodes represent one of the most significant developments in the protection of circuit devices from electrical transients. JAN1N6146US application field and working principle are part of the wide range of transient voltage suppression diodes that are available in a variety of packages and sizes.
TVS - Diodes are able to suppress short duration, high amplitude electrical surges that may occur due to lightning, electrostatic discharges or other electrical disturbances. The JAN1N6146US, specifically, is a monolithic transient suppression diode that is constructed using a leaded glass-passivated junction structure. It exhibits excellent breakdown characteristics and a low reverse current leakage. These characteristics make it suitable for a variety of applications, including:
- High enclosure, small package, and general purpose electrical circuit boards
- Electric communication equipment circuits
- Consumer electronic equipment and automobile power supply systems
- Computers, digital circuitry, and other sensitive digital instrumentation systems
The typical breakdown voltage (BV) of the JAN1N6146US is 190-220 volts and the minimum clamping voltage (VC) is 400 volts. The JAN1N6146US has an ultra-low reverse recovery current, so it is capable of suppressing ultra-short duration high frequency voltage transients. Its glass-passivated junction construction allows for use at higher temperatures than ordinary planar structures and provides better punch through characteristics, which allow it to be used in high-power transistors.
The working principle of the JAN1N6146US is based on a reverse-biased, surface-mount diode. When an electrical transient occurs, the diode goes into its avalanche breakdown region and the current is diverted away from the protected load. Once the surge is over, the diode turns off, thus disconnecting the circuit from the transient voltage and protecting the load.
One of the key advantages of the JAN1N6146US over other comparable TVS - Diodes is its small size. With a maximum forward voltage drop of only 0.25, this unit is able to be mounted in much smaller spaces than other diode types. Furthermore, its superior current surge protection makes it ideal for high-power applications.
In conclusion, the JAN1N6146US offers impressive performance and reliable protection in industrial and consumer applications. Its ultra-low breakdown voltage and reverse recovery current make it well-suited for a range of environments where electrical transients are common. Its small size and high temperature operation are additional features that make it an attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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