JAN1N6467US Circuit Protection

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The JAN1N6467US is a transient voltage suppressor (TVS) diode developed by ON Semiconductor. It is a multi-purpose, high-speed low-power diode suitable for applications like over-voltage/over-current protection on power-supply lines, protection from electro-static discharge (ESD) and similar surge-like transients. Its maximum pulse power is 600W, with a working temperature ranging from -65℃to 175℃.

The JAN1N6467US diode consists of a silicon epitaxial base chip and a glass passivated junction. The glass-passivated junction ensures superior temperature stability and greater reliability than conventional diodes. It also has a low leakage current and a low forward voltage drop.

The working principle of the JAN1N6467US is based on its use of avalanche breakdown. When a current or surge is applied to the anode of the diode, it is allowed to pass through as normal. But once the current exceeds a certain point (the avalanche method), the diode will clamp down and offer considerable resistance to any further current. This helps protect the circuit from voltage spikes and power surges that can lead to component damage and other problems.

The JAN1N6467US diode is widely used in industrial, automotive, medical, and consumer electronics applications. It is often found in systems that require over-voltage protection and ESD protection. It is also a popular choice for circuits that use higher voltages such as those typically found in motor controllers and in high-end amplifiers.

In conclusion, the JAN1N6467US is a powerfulTVS diode with excellent electrical and temperature characteristics. Its avalanche breakdown operation principle provides reliable protection to circuits in a wide range of applications. Its sturdy construction and low leakage current make it suitable for use in high-voltage systems and in critical applications. It is thus an excellent choice for systems that require good ESD and over-voltage protection.

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