JAN1N6147US Circuit Protection |
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Allicdata Part #: | 1086-19625-ND |
Manufacturer Part#: |
JAN1N6147US |
Price: | $ 15.06 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 12.2V 23.42V C SQ-MELF |
More Detail: | N/A |
DataSheet: | JAN1N6147US Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 13.68670 |
Series: | Military, MIL-PRF-19500/516 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 12.2V |
Voltage - Breakdown (Min): | 14.44V |
Voltage - Clamping (Max) @ Ipp: | 23.42V |
Current - Peak Pulse (10/1000µs): | 63.94A |
Power - Peak Pulse: | 1500W (1.5kW) |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, C |
Supplier Device Package: | C, SQ-MELF |
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TVS -Diodes (Transient Voltage Suppressors) have a wide range of applications for providing surge protection in many types of electrical and electronic equipment. The JAN1N6147US uses a bidirectional, axial-leaded transient voltage suppressor (TVS) diode to provide reverse-polarity protection for industrial and consumer electronics devices. It is designed to protect against over-voltage conditions with transients up to 600W (peak pulse power).
The JAN1N6147US provides superior protection from the damaging effects of over-voltage transients. It helps to prevent costly repairs caused by component failure. The device has low forward and reverse leakage, low capacitance clamping, and can be used in a wide range of applications including low voltage automotive audio systems, computer peripheral and other low voltage systems.
The JAN1N6147US is a low-power, low-current device that works by detecting over-voltage conditions and quickly clamping the voltage at a safe level. It does this by diverting the energy from the transient into a low resistance path, where it is dissipated safely as heat. The device also has an internal capacitor that helps it absorb the energy produced by the transient.
The JAN1N6147US uses both avalanche breakdown and Zener breakdown mechanisms to provide the required protection. In avalanche breakdown, the voltage is reduced by removing the electrons from the N-type material by applying a large voltage, resulting in a breakdown and current flow. In Zener breakdown, a reverse-biased Zener diode reduces the voltage to below that necessary to cause avalanche breakdown.
This combination of mechanisms provides superior protection from over-voltage transients – protecting components from damage. It also helps to prevent equipment failure and ensures that systems remain reliable even in the event of a transient or surge.
The JAN1N6147US has many advantages over other types of TVS diodes. It has low forward voltage and is designed for high surge capability. The device also has low leakage current and reverse power dissipation, which help to reduce power consumption. Additionally, the device is designed for low capacitance and low leakage, allowing it to be used in a wide range of high speed devices.
The JAN1N6147US is a versatile and reliable device that can be used in many types of electronics applications. Its low capacitance and reverse power dissipation make it ideal for use in low voltage automotive audio systems, computer peripheral and other low voltage systems. The device provides superior protection from over-voltage transients, enabling systems to remain operationally reliable in the event of a transient or surge.
The specific data is subject to PDF, and the above content is for reference
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