JAN1N6119A Circuit Protection |
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Allicdata Part #: | 1086-2193-ND |
Manufacturer Part#: |
JAN1N6119A |
Price: | $ 10.98 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 27.4V 49.9V AXIAL |
More Detail: | N/A |
DataSheet: | JAN1N6119A Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
100 +: | $ 9.97633 |
Series: | Military, MIL-PRF-19500/516 |
Packaging: | Bulk |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 27.4V |
Voltage - Breakdown (Min): | 34.2V |
Voltage - Clamping (Max) @ Ipp: | 49.9V |
Current - Peak Pulse (10/1000µs): | 10A |
Power - Peak Pulse: | 500W |
Power Line Protection: | No |
Applications: | General Purpose |
Capacitance @ Frequency: | -- |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Supplier Device Package: | Axial |
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The JAN1N6119A is a silicon avalanche diode designed for ESD (electro-static discharge). It has an extremely fast response time and a low breakdown voltage, making it an ideal choice for protecting sensitive circuits against ESD events. It is widely used in consumer electronics, data processing and communications equipment, semiconductor manufacturing, and automotive applications. In this article, we will discuss the application fields and working principle of the JAN1N6119A.
Application Fields
The JAN1N6119A is specifically designed to act as a protection device in a variety of electronic components that are susceptible to ESD events. The device has a low breakdown voltage, allowing it to trigger before ESD has a chance to damage underlying components. It is widely used in consumer electronics, data processing and communications equipment, semiconductor manufacturing, and automotive applications. The device is also suitable for surge protection applications, particularly when combined with other elements in a protection circuit.
Working Principle
The JAN1N6119A is a diode that is designed to provide ESD protection. When an ESD event occurs, the device detects the rise in voltage and quickly diverts it to ground, providing protection to the underlying electronic components. This is called the “avalanche effect”, and is the key principle behind the device\'s operation. The device has a low breakdown voltage, allowing it to react quickly and effectively to ESD events. The device also has an extremely fast trigger time, allowing it to quickly divert the energy away from underlying components before significant damage can occur.
Conclusion
The JAN1N6119A is a silicon avalanche diode that is designed to protect sensitive electronic components from ESD events. It has a low breakdown voltage and an extremely fast response time, making it an ideal choice for a variety of applications. It is widely used in consumer electronics, data processing and communications equipment, semiconductor manufacturing, and automotive applications. The device is also suitable for surge protection applications, particularly when combined with other elements in a protection circuit. Understanding the application field and working principle of the JAN1N6119A is important for engineers designing and using ESD protection circuits.
The specific data is subject to PDF, and the above content is for reference
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