JAN1N6120 Circuit Protection

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When considering TVS-Diodes it is important to have an understanding of the JAN1N6120. Identifying its application field as well as its working principle can help inform decisions concerning its use.

The JAN1N6120 is a Surge Stopper Diode. It is used to protect sensitive electronic components from voltage surges as well as static electricity. As with any diode, it is used to control the direction of the current and is connected to the device it is used to protect. It can withstand a continuous forward current up to 5A and a peak forward surge current up to 130A. It is an unidirectional device, meaning that it only allows current flow in one direction.

In its application field, the JAN1N6120 is mostly used in automotive, telecom, and computing applications, as its high surge current handling capabilities make it ideal for such purposes. The low forward voltage drop also makes it an attractive option for energy efficient systems. For instance, its use in automotive systems such as anti-lock brakes helps protect the driver in case of a spike in power.

The JAN1N6120’s working principle is relatively simple and revolves around the use of a reversed biased p-n junction diode. It is constructed in a similar manner to a standard diode, with a cathode and an anode, but with an additional layer of cladding material. When a voltage surge occurs, the additional cladding layer aids in the protection process by clamping the voltage to a level that will not cause damage to the device it is designed to protect. It pulls the excess voltage above the PN junction’s breakdown voltage value, thus limiting the current flow.

Due to its high surge current and low forward voltage drop capabilities, the JAN1N6120 makes an ideal choice for automotive, telecom, and computing applications. Its low forward voltage drop translates into improved energy efficiency and its surge suppression capabilities ensures protection for sensitive electronic devices from voltage surges. Its working principle, based on the use of a reversed biased p-n junction diode with an additional layer of cladding material, helps to provide added protection.

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