BF1108,215 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BF1108,215 is a high-performance radio frequency (RF) enhancement mode (e-mode) metal-oxide semiconductor field-effect transistor (MOSFET) designed for use in low-power wireless applications. This device is manufactured using advanced BICMOS technology, making it well suited for use in portable and wireless communication products. The BF1108,215 has a low on-resistance of 1.8 Ω and a high current gain of 3.2 GHz, making it ideal for use in power-sensitive applications such as high dynamic range and low-noise amplifier (LNA) stages.

The BF1108,215 is a voltage-variable device and has two different types of gate drive, one p-type and one n-type. The two gate drives are coupled together, making it possible to control both the on-resistance and the current gain. This makes the BF1108,215 ideal for use in high dynamic range applications due to its higher current gain and lower on-resistance. The transfer characteristic of the device is highly non-linear, making it well-suited for use in RF amplifier circuits with large amounts of high-frequency harmonic distortion.

The BF1108,215 has a wide temperature operating range of –40°C to +85°C and is also capable of being overdriven to higher drain-source voltages. This makes it ideal for use in high-power applications such as Dynamic Element Matching (DEM) and for use in high gain antenna systems.

The BF1108,215 is stable over a wide range of drain-source voltages, making it suitable for use in high-power radio systems where a high level of stability is required. The device also has excellent thermal stability and can be used in applications where good thermal results are desired.

Overall, the BF1108,215 is a very versatile and reliable device. It has a high current gain, low on-resistance, and excellent thermal stability, making it an ideal choice for use in high-power radio systems, low-power wireless applications, and any other application requiring a robust RF FET.

The specific data is subject to PDF, and the above content is for reference