Allicdata Part #: | 568-6141-2-ND |
Manufacturer Part#: |
BF1101,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 7V 30MA SOT143B |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 12mA 800MHz SOT... |
DataSheet: | BF1101,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 800MHz |
Gain: | -- |
Voltage - Test: | 5V |
Current Rating: | 30mA |
Noise Figure: | 1.7dB |
Current - Test: | 12mA |
Power - Output: | -- |
Voltage - Rated: | 7V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BF1101 |
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BF1101,215 Application Field and Working Principle
BF1101,215 is a type of silicon dual-gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is used in many commercial and industrial applications.
A MOSFET is a three-terminal semiconductor device and consists of source, gate and drain terminals. The source and drain electrodes are “sandwiched” over an oxide layer and the gate (or control electrode) is connected to a voltage source. Applying a positive voltage to the gate stimulates charge carriers (electrons or holes) in the channel to create a conductive path between the source and the drain by making the channel conductive. This is the basic principle of operation of MOSFETs.
BF1101,215 are specifically designed to achieve superior radio-frequency applications. The device features a dual-gate design which improves the sensitivity of the device, resulting in better performance in low-noise applications. The dual-gate design also reduces cross-talk between the two gates and reduces distortion in radio-frequency applications.
The BF1101,215 is available in a variety of packages and its performance can be tailored to a wide range of applications. These include high-frequency amplifiers, low-noise amplifiers, analog or digital switching, and RF switching. This makes it well suited for many diverse applications such as mobile base station transmitters, base station receiver systems, satellite Earth station transceivers, commercial and military communications systems, and test equipment.
Overall, the BF1101,215 is a versatile silicon dual-gate MOSFET which is well-suited for many high-frequency and radio-frequency applications. Its dual-gate design enables superior performance as compared to other single-gate MOSFETs and it is capable of operating at much higher frequency ranges. It is available in a variety of packages and is an ideal choice for many commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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