Allicdata Part #: | BF1109WR,115-ND |
Manufacturer Part#: |
BF1109WR,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 11V 30MA CMPAK-4 |
More Detail: | RF Mosfet N-Channel Dual Gate 9V 800MHz 20dB CMP... |
DataSheet: | BF1109WR,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 800MHz |
Gain: | 20dB |
Voltage - Test: | 9V |
Current Rating: | 30mA |
Noise Figure: | 1.5dB |
Power - Output: | -- |
Voltage - Rated: | 11V |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | CMPAK-4 |
Base Part Number: | BF1109 |
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The BF1109WR,115 is a type of transistor. Like other transistors, it acts as an amplifier and uses electrical current to control a larger current, or to switch on or off a larger current. Transistors, however, come in many different shapes and sizes, and the BF1109WR,115 is classified as a type known as a Field Effect Transistor (FET). FETs are widely used in radio frequency (RF) applications, as well as in high-speed computers and many other electronic control systems.
The BF1109WR,115 is a type of Metal Oxide Semiconductor FET (MOSFET), which means it is made from metal oxide, instead of a traditional semiconductor material like silicon. This type of FET is capable of very high switching speeds, because of its metal oxide construction, which allows it to both store and transfer charge rapidly. The metal oxide also provides good insulation, which helps reduce interference and noise in RF applications.
The main purpose of the BF1109WR,115 is to act as a power amplifier in an RF application. A MOSFET can serve many functions in such an application, such as controlling the current draw, switching power on and off, providing gain and filtering, and amplifying the signal. In order to do this the MOSFET must be connected in an appropriate circuit.
The BF1109WR,115 works based on the principle of capacitance. When an electric current is applied to it, it creates an electrical field, and this field is used to modulate the voltage and current in the circuit. To create the field, a "gate" is connected to the MOSFET. The gate works like a control switch, and when it is switched on, it creates an electrical field around the MOSFET. This field controls how much current flows in the circuit, making it possible to switch a small current to a larger one.
The BF1109WR,115 is a specialized type of FET, and it is used in many different types of RF applications, including radio broadcasting, television, cell phones, satellite communication and many more. It can be used to control signals, and can filter out unwanted noise. In addition, it can provide gain in low level signals and amplify weak signals, making it very useful in radio and television broadcast systems.
The BF1109WR,115 is a versatile and powerful type of FET, and its flexibility and speed make it ideal for use in radio frequency applications. As such, it has become very popular in a wide range of industries, from consumer electronics to medical equipment, military equipment and many more. Its combination of high speed, stability and low power consumption make it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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