BF1105,215 Discrete Semiconductor Products |
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Allicdata Part #: | 568-6145-2-ND |
Manufacturer Part#: |
BF1105,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 7V DUAL SOT143 |
More Detail: | RF Mosfet N-Channel Dual Gate 5V 800MHz 20dB SOT... |
DataSheet: | BF1105,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | N-Channel Dual Gate |
Frequency: | 800MHz |
Gain: | 20dB |
Voltage - Test: | 5V |
Current Rating: | 30mA |
Noise Figure: | 1.7dB |
Power - Output: | -- |
Voltage - Rated: | 7V |
Package / Case: | TO-253-4, TO-253AA |
Supplier Device Package: | SOT-143B |
Base Part Number: | BF1105 |
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BF1105,215 Application Field and Working Principle
BF1105,215 is a type of Field Effect Transistor (FET). FETs are transistors that have a source, drain, and gate terminal. They are used in analog and digital circuits like amplifier circuits, timing circuits, astable multivibrators, and many others. BF1105,215 is specifically a radio frequency (RF) FET, it is used for high frequency amplifier circuits for amplifying signals in the megahertz range.
RF FETs like the BF1105,215 are used to amplify radio waves at different power levels. They are capable of amplifying signals from 1000 MHz up to 4500 MHz, which is within the VHF and UHF bands. They are used in radar systems and communication systems, where different types of modulation techniques are used for transmitting signals. They are also used for modulation in FM transceivers and receivers.
The working principle of the BF1105,215 is that it is a voltage controlled device. That is, it is designed to be used as an amplifier at different power levels and frequencies. When voltage is applied to the gate terminal, it creates an electric field in the channel between the source and drain. This electric field varies the width of the channel, which changes the resistance of the channel and thus the current flowing through it. As a result, it amplifies the signal, which is then converted into a useable form.
The main advantage of using this type of transistor is that it has a low noise figure, which makes it suitable for use in sensitive applications. It also has a good output power, and its drain efficiency is quite low, which reduces losses and allows more efficient operation.
The BF1105,215 FET is widely used in communication systems, broadcasting systems, and other electronic circuits where sensitive, reliable, and high speeds amplifying of signals is required. It can also be used in applications that need to cover a wide range of frequencies, such as RF broadcasting, satellite communications, and point-to-point communication systems.
The specific data is subject to PDF, and the above content is for reference
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