Allicdata Part #: | BF1108/L,215-ND |
Manufacturer Part#: |
BF1108/L,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | IC RF SWITCH |
More Detail: | RF Mosfet N-Channel |
DataSheet: | BF1108/L,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Transistor Type: | N-Channel |
Frequency: | -- |
Gain: | -- |
Current Rating: | 10mA |
Noise Figure: | -- |
Power - Output: | -- |
Voltage - Rated: | 3V |
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BF1108/L,215 is a logic-level N-channel enhancement-mode RF power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that provides high breakdown and operating voltage, large output resistance, high power capacity and high efficiency. It is designed to meet the needs of high frequency and wireless communication applications. The most common application and working principle of BF1108/L,215 are described below.
Application
The BF1108/L,215 is commonly used in high frequency and wireless communication applications such as mobile phones, notebooks, modems, cameras, PLCs and other network products. It is also used as an RF power amplifier in mobile base stations, wireless LANs and other communication devices. It can also be used as a voltage regulator, switch, and RF power amplifier in various applications. In addition, it can be used as an oscillator, mixer, and amplifier in various radio circuits. The BF1108/L,215 is commonly used in place of other types of MOSFETs, such as the popular BF1108/L,214, due to its higher power capability.
Working Principle
The BF1108/L,215 is an N-channel enhancement-mode MOSFET. This means that when a positive voltage is applied to its gate, an electric field is created between the source and drain, causing current to flow through the channel. The threshold voltage Vth of the MOSFET controls how much current is allowed to flow through the channel. If the voltage is above the threshold voltage, current will flow; however, if the voltage is below the threshold voltage, the current will be blocked. The on-state resistance Ron is determined by the gate voltage and is therefore very low, allowing for high power transfer.
The BF1108/L,215 is capable of very high breakdown voltages due to its advanced process technology, making it ideal for communication applications where high power is required. Its large output resistance Rds allows it to maintain a relatively constant voltage throughout its operating range, which helps to increase efficiency. Its high power capacity and efficiency make it very popular in applications such as mobile base stations, wireless LANs and other communication devices. The BF1108/L,215 is a highly efficient, cost-effective solution for RF power applications.
The specific data is subject to PDF, and the above content is for reference
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