BC849BE6327HTSA1 Discrete Semiconductor Products |
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Allicdata Part #: | BC849BE6327HTSA1TR-ND |
Manufacturer Part#: |
BC849BE6327HTSA1 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN 30V 0.1A SOT-23 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 100mA 250MHz 330m... |
DataSheet: | BC849BE6327HTSA1 Datasheet/PDF |
Quantity: | 24000 |
3000 +: | $ 0.01889 |
6000 +: | $ 0.01704 |
15000 +: | $ 0.01482 |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 330mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | BC849 |
Series: | -- |
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Transistors - Bipolar (BJT) - Single
The BC849BE6327HTSA1 transistor is part of the small signal and low power transistor family. It is used in a wide variety of general purpose switching and electronics circuit applications. This product is a highly versatile and cost-effective bipolar junction transistor (BJT).
The BC849BE6327HTSA1 transistor was developed to offer a wide range of performance characteristics in a small physical package size. It comes in both NPN and PNP versions, and is designed for use in both surface mount and through-hole applications. It also has good thermal capabilities and can operate in temperatures from -55°C to +150°C. The maximum power dissipation rating is 0.8W.
In terms of current handling capabilities, the BC849BE6327HTSA1 transistor can handle up to 300mA of collector current. It was designed to provide excellent switching speeds and can be used in high-speed signal processing applications. The typical rise and fall times are 0.25µs and 0.22µs respectively. It has a low collector-base capacitance of just 10pF, making it suitable for high-frequency applications.
The BC849BE6327HTSA1 transistor is capable of handling very high input impedance and is also suitable for working in both common-emitter and common-collector configurations. Its gain bandwidth product (fT) is 25MHz. It is also able to handle a wide range of operating voltages, from a minimum of 10V up to a maximum of 40V.
The BC849BE6327HTSA1 transistor is used in a variety of electronic applications, including general-purpose switching, sampling and detection electric circuits, small signal AC and DC amplifiers, audio power amplifiers, power supplies and other similar devices.
The main advantage of the BC849BE6327HTSA1 bipolar junction transistor is its low price, flexibility and its high switching speed. In addition, it also has a very low profile package, which also contributes to reducing the total cost of the product.
The basic working principle of the BC849BE6327HTSA1 transistor is relatively simple. This device is composed of three terminals, the emitter, collector and the base. When an electric current is applied to the base terminal, it allows a greater current to pass from the collector to the emitter. This is due to the electric field created between these two terminals, which in turn generates a larger current.
In summary, the BC849BE6327HTSA1 bipolar junction transistor is an efficient and cost-effective device, with excellent switching characteristics and high input impedance. It is widely used in a number of electronic devices, such as small signal amplifiers and power supplies, as well as high-speed switching circuits.
The specific data is subject to PDF, and the above content is for reference
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