BC847CLT1

Series:	--
Packaging:	Cut Tape (CT)
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	420 @ 2mA, 5V
Power - Max:	300mW
Frequency - Transition:	100MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

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Introduction

BC847CLT1 is a monolithic double-diffused bipolar transistor manufactured by STMicroelectronics. This NPN device is packaged in a small SOT-23 package, making it ideal for applications requiring low-power consumption, such as consumer electronics or automotive electronics. It has a wide range of application fields and operating principles, which will be discussed in this article.

Application Field

BC847CLT1 is a general-purpose device that is suitable for a wide range of applications. It is commonly used in consumer and automotive electronics, as it is designed to meet lower power consumption demands. Its high frequency capability makes it suitable for use in medium frequency (MF) and high frequency (HF) applications such as pulse generation and radio-frequency (RF) amplifiers. It is also suitable for power supplies, due to its low saturation voltage and low junction capacitances. Additionally, the device can be used for precision current limiters, inverting amplifiers, and switching circuits.

Working Principle

BC847CLT1 is an NPN bipolar transistor, meaning it is composed of three semiconductor materials: emitter, collector, and base. The emitter and collector are doped with different impurities and have different dopant concentrations, which are chosen to ensure that electrons can flow freely between them when a voltage is applied to the base. When this voltage is applied and the transistor is “on”, current flows through and the base-collector junction acts as a diode to prevent current from flowing back. The current will flow from the emitter to the collector, where it will be amplified proportionately to the base current. The ability to amplify a signal is the primary function of a bipolar transistor. The amount of gain a transistor can provide depends on the ratio of the current flowing out of the emitter to the current flowing into the base. This ratio is known as the transistor’s “beta”, and is beneficial in power amplifiers and switching circuits, as it reduces distortion due to an increase in base current.

Conclusion

BC847CLT1 is a high-performance and versatile bipolar transistor manufactured by STMicroelectronics. The device is packaged in a small SOT-23 package, making it suitable for many low-power applications. It has a wide range of application fields, including Consumer and automotive electronics, pulse generation, RF amplifiers, power supplies, and switching circuits. The working principle of the device is based on a NPN configuration that allows for current to flow from the emitter to the collector. The current gain of the device is determined by the transistor’s beta, which typically ranges from 10 to 200. This versatility and performance make BC847CLT1 a great choice for many designs.

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