BC846B/DG/B3,215

Series:	--
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	65V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):	15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 5V
Power - Max:	250mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB

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Introduction to BC846B/DG/B3,215 Transistors

BC846B/DG/B3,215 is a type of Bipolar Junction Transistor (BJT) characterized by its single-layer planar base structure. It is composed of a substrate, an emitter, and two collector layers. The three layers are connected to each other by an insulating dielectric layer. The two collector layers determine the switching characteristics of the transistor.

Application Fields of BC846B/DG/B3,215

BC846B/DG/B3,215 transistors are mainly used in automotive applications where low on-resistance and excellent switching performance are desired. The low on-resistance enables better control over power losses and increases battery efficiency. Additionally, it is suitable for applications such as power management, DC-DC converter/inverter control, and load switch/motor control in automotive electronics. It is also used as a load switch in white goods, personal electronics and industrial systems.

Working Principle of BC846B/DG/B3,215

The working principle of BC846B/DG/B3,215 transistor is quite simple and easy to understand. The two collector layers are insulated from each other in order to provide two independent paths for the current flow between the emitter and collector. When a voltage is applied to the base, the transistor enters a \'ON\' state and the current flows through one of the collector paths, allowing current to flow from the emitter to the collector. Similarly, when the applied voltage is removed the transistor will enter a \'OFF\' state and the current will be switched off. BC846B/DG/B3,215 transistors are capable of switching between the ON and OFF state in a short amount of time, allowing for fast switching and excellent performance in high-speed application. The fast switching also allows for better control over power losses and increases system efficiency.

Characteristics of BC846B/DG/B3,215

BC846B/DG/B3,215 transistors have a low on-resistance of ≤2.1 Ω typical, a low saturation voltage of ≤1.1 V typical, and a maximum collector current of ≤100 mA. Additional features such as noise immunity and good thermal performance make them ideal for automotive applications. The device has a maximum voltage rating of 40 V and a maximum power dissipation rating of 500 mW.

Conclusion

BC846B/DG/B3,215 transistors are an ideal choice for automotive applications where low on-resistance and excellent switching performance are desired. The low on-resistance reduces power losses, improving system efficiency and battery life. Additionally, its fast switching capabilities and good thermal performance make it suitable for applications such as power management, DC-DC converter/inverter control, and load switch/motor control in automotive electronics.

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