BC846BW/DG/B3F Allicdata Electronics
Allicdata Part #:

BC846BW/DG/B3F-ND

Manufacturer Part#:

BC846BW/DG/B3F

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS GEN PURPOSE SC-70
More Detail: Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 250m...
DataSheet: BC846BW/DG/B3F datasheetBC846BW/DG/B3F Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Description

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BC846BW/DG/B3F transistors are type of bipolar junction transistors. BJTs are current-controlled devices, meaning that the current passing through the base will determine the amount of current flowing from the collector to the emitter. They are one type of the most widely-used transistors and can be used to amplify and switch signals and power. The BC846BW/DG/B3F transistors are widely used in amplifier circuits.

A bipolar junction transistor (BJT) consists of three terminals: the emitter, the base, and the collector. In BC846BW/DG/B3F transistors, the emitter is a high-energy electron source, the collector is a low-energy electron sink, and the base is a controllable field between them. When a small current is applied to the base, it causes a large current to flow from the emitter to the collector. This amplification capability makes BJTs ideal for applications where higher current is needed for output.

BC846BW/DG/B3F transistors work by using two junctions rather than one. These two junctions are the base-emitter junction and the base-collector junction. When current passes through a BJT, it creates a voltage drop at both junctions, which allows current to flow between the emitter and collector. The amount of current that flows between the collector and emitter depends on the amount of current applied to the base.

BC846BW/DG/B3F transistors are usually used in audio amplifiers and in digital circuits. In audio amplifiers, they are generally used in pre-amplifier stages, where they amplify the weak electric signals from the microphone. In digital circuits, BC846BW/DG/B3F transistors can be used as switching elements, to switch signals on and off. They are also often used in power amplifiers to amplify the current from the power supply and drive the output loudspeaker.

BC846BW/DG/B3F transistors offer many advantages over other types of transistors. For example, they are highly efficient, with a high current gain and low power consumption. They are also very durable and can withstand high levels of temperature and voltage without suffering any damage. Furthermore, BC846BW/DG/B3F transistors are widely available and easy to find, so they are a great choice for many applications.

The BC846BW/DG/B3F transistors are an ideal choice for many applications due to their low power consumption, high current gain, and durability. They are widely used in audio amplifiers and in digital circuits, and they offer many advantages over other types of transistors. With their wide availability, these transistors are a great choice for any electronic project.

The specific data is subject to PDF, and the above content is for reference

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