Allicdata Part #: | BC847B/DG/B3,215-ND |
Manufacturer Part#: |
BC847B/DG/B3,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS GEN PURPOSE TO-236AB |
More Detail: | Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 200m... |
DataSheet: | BC847B/DG/B3,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 45V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 5V |
Power - Max: | 200mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
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Transistors - Bipolar (BJT) - Single
The BC847B/DG/B3,215 is a single Bipolar Junction Transistor (BJT) device. It is an NPN transistor type that is manufactured by the NXP Semiconductor company. The transistor package type is a surface mount SOT-23 package, with three pins.
Application Field
The BC847B/DG/B3,215 is a general-purpose device and is used in a wide range of applications. It is primarily used in switching and linear amplification applications. The device has a low-noise, frequency-stable typical performance, making it an ideal choice for audio amplifiers and other types of switching applications. In addition, the device\'s small size makes it especially suitable for portable and embedded systems, such as those found in radio transmitters, mobile phone antennas, and GPS locators.
Working Principle
The basic working principle of the BC847B/DG/B3,215 is similar to other BJT transistors. When it is switched on, current flows from the collector and base electrodes to the emitter electrode, creating a forward- and reverse-biased voltage-current distribution. Due to this, the device is able to control the flow of current in the circuit, which is then used for linear and switching circuitry applications.
The BC847B/DG/B3,215 is capable of high-speed switching performance with a maximum switching speed of 500MHz, allowing the circuit to perform high-speed operations such as pulse-width modulation and frequency modulation. In addition, its low-power consumption capability makes it well-suited for battery-powered applications.
The device also has a wide impedance matching range of 20-200ohms and a maximum power dissipation of 250mW, making it well-suited for high-powered applications. Additionally, it is rated for +125°C maximum junction temperature operation, making it suitable for harsh environment applications.
Conclusion
In conclusion, the BC847B/DG/B3,215 is a general-purpose NPN Bipolar Junction Transistor device suited for a wide range of switching and linear applications. Its small size, wide impedance matching range, low-noise performance, and low-power consumption make it well-suited for both portable and embedded applications. Additionally, its high-speed switching capability and maximum junction temperature rating make it suitable for applications in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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