BC849CLT1G Discrete Semiconductor Products

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BC849CLT1G is a type of single bipolar junction transistor (BJT) intended for use in low-power applications. This PNP (positive-negative-positive) device has a glass-encapsulated surface-mount leaded (SML) package and is designed to be used in both low and high frequency circuits. It is commonly used in light to moderate power applications, such as in signal amplifiers, oscillators, precision switching circuits and a wide variety of general purpose electronic applications.The BC849CLT1G is a low power, low noise PNP transistor designed to switch in the range of 1-200 mA. The low noise level makes this transistor suitable for use in low noise circuits, such as audio or RF amplifiers. The transistor is capable of high frequency operation up to 1 MHz, making it suitable for use in high speed digital circuits. The device is also capable of withstanding high voltages up to 30 volts, making it suitable for use in power applications.The BC849CLT1G is a current-gain device, meaning it will amplify the current passing through it by a factor of hFE, typically around 100. This enables the device to act as a switch in an electronic circuit, controlling the flow of current, enabling devices such as transistors, FETs and other ICs to be switched on and off.The BC849CLT1G also has a wide range of temperature ratings, from -65C to +150C. This allows the device to be used in a wide range of temperature conditions and environments, from those encountered in extreme climates, to those encountered in regular home or office conditions.The BC849CLT1G has a wide variety of application fields, from signal amplifiers, to power amplifiers, to precision switching circuits and more. The wide temperature rating makes it suitable for use in a variety of conditions and environments. The low noise level, high frequency operation and voltage withstand capabilities make it suitable for use in a range of digital and analog devices.In summary, the BC849CLT1G is a single bipolar junction transistor (BJT) intended for use in low-power applications. It is capable of high frequency operation up to 1 MHz, as well as high voltage withstand capabilities up to 30 volts. It is also capable of working in a wide range of temperatures, from -65C to 150C. Its wide variety of application fields, low noise level and power capabilities make it suitable for use in a range of digital and analog circuit designs.

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