TPCA8008-H(TE12L,Q Discrete Semiconductor Products

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The TPCA8008-H(TE12L,Q) is a dual-output MOSFET designed for use in many applications, such as switching, power conversion, and power supply circuits. It is well suited for designs requiring high efficiency and low noise.

The TPCA8008-H(TE12L,Q) is a single high-performance enhancement-mode n-channel MOSFET. It is constructed on an SOI (Silicon-On-Insulator) process. It is optimized to provide a maximum RDS(ON) of 16.8 mΩ in an 8-pin SO-8 package. The device is particularly suitable for applications requiring lower gate charge and faster switching speeds compared to power MOSFETs. It features a positive temperature coefficient on threshold voltage and a small reverse body diode current.

The TPCA8008-H(TE12L,Q) utilizes a unique construction that incorporates a metal gate along with an insulated gate electrode. The design enables the source and drain region to be connected to the metal gate without the need for actual physical contacts. The metal gate acts as an efficient heat sink, enabling improved electrical performance and increased power train efficiency. As a result, the TPCA8008-H(TE12L,Q) is suitable for applications that require increased power conversion efficiency, higher switching speeds, and lower switching losses.

The TPCA8008-H(TE12L,Q) is specifically designed for low-side switching applications, such as inverters and DC-DC converters. When used in inverter circuits, it enables a low gate-source voltage to turn the device on. This allows the converter to operate at higher frequency and voltage levels, improving power conversion efficiency. In addition, it features a low-dissipation diode that reduces switching losses. Thus, the converter is well suited for applications requiring higher power density.

The TPCA8008-H(TE12L,Q) is a versatile device and can be used in many applications, such as motor and power supply control, AC-DC converters, switching regulators, and lighting circuits. It is well suited for applications requiring a low RDS(ON) and fast switching speeds. It also features a positive temperature coefficient on the threshold voltage and a small reverse body diode current, making it ideal for applications requiring improved thermal stability and higher switching speed.

In summary, the TPCA8008-H(TE12L,Q) is a single high-performance enhancement-mode n-channel MOSFET specifically designed for low-side switching applications. It features a low RDS(ON) and fast switching speeds, as well as a positive temperature coefficient on threshold voltage and a small reverse body diode current. Its unique design, incorporating a metal gate and an insulated gate electrode, enables improved electrical performance and increased power train efficiency, making the TPCA8008-H(TE12L,Q) suitable for a variety of applications, such as motor and power supply control, AC-DC converters, switching regulators, and lighting circuits.

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