TPCA8010-H(TE12L,Q Allicdata Electronics
Allicdata Part #:

TPCA8010HTE12LQTR-ND

Manufacturer Part#:

TPCA8010-H(TE12L,Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 200V 5.5A 8-SOPA
More Detail: N-Channel 200V 5.5A (Ta) 1.6W (Ta), 45W (Tc) Surfa...
DataSheet: TPCA8010-H(TE12L,Q datasheetTPCA8010-H(TE12L,Q Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: π-MOSV
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 450 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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The TPCA8010-H(TE12L,Q) is a Described as a Logic Level Low Side Enhanced Power MOSFET. It is used in electronic power distribution devices. Typically, it is used when a low side switch needs to be switched on and off with a logic level signal.

This MOSFET belongs to the Single type of Field Effect Transistors, or FETs. FETs are three-terminal devices whose output characteristics are determined by a small input signal. FETs are divided into two main categories: insulated gate, or IG, and enhanced power, or EP. Both types are able to switch very high currents with a small signal.

The TPCA8010-H(TE12L,Q) utilizes an EP type of FET. This type of FET offers high power handling and low resistance at low voltages, making it an ideal choice for applications where the device needs to regulate large amounts of power. EP FETs are advantageous over IG FETs in that they are capable of operating at higher frequencies and lower voltage levels.

This particular device has been designed with an innovative gate driver design that provides better control of the current through the switch. This control of the current is important in order to prevent over current/over voltage conditions, as well as to provide a quieter and more consistent operation. Its maximum breakdown voltage is +/-10V and its a Rds on is just 3.1 ohms @ 4.5V, making it suitable for applications where low resistance is desired.

In terms of its application field and working principle, the TPCA8010-H(TE12L,Q) can be used in a variety of applications requiring a low side switch when a logic level signal is being used. It can be used in applications such as motor control and solenoid control systems, power supplies, motor and driver circuits, automotive systems, and power control modules.

At its core, this device works by having a logic level input signal used to control the power supply that is connected to the drain terminal. When the logic level signal applied to the gate terminal reaches the device\'s threshold voltage, the device will switch on and power will be available at the drain terminal. Once the logic level signal is turned off, the device will switch off and the power supply connected to the drain terminal will be shut off as well.

The TPCA8010-H(TE12L,Q) is a versatile Low Side Enhanced Power MOSFET suitable for a variety of applications and offers excellent control of current and low on resistance. With its high power handling and low voltage operation, it is an ideal choice for applications requiring a low side switch when a logic level signal is being used.

The specific data is subject to PDF, and the above content is for reference

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