TPCA8103(TE12L,Q,M

The TPCA8103 is a single, vertical power MOSFET transistor developed by Toshiba semiconductor. It is a cost-effective device designed for the automotive sector. It features high power dissipation capability, low on-resistance, fast switching speed and low gate charge.

The TPCA8103 is designed for use in power switching applications where space savings are key, such as automotive headlights, interior and exterior lighting, window shutters, wipers, side and rearview mirrors, and power seats. Its slim, vertical profile also makes it suitable for use in handheld applications like cell phones and PDAs. The device is made from high-grade silicon and features low thermal resistance for enhanced reliability and maximum power dissipation.

The TPCA8103 provides fast switching speed and high reliability due to its low input capacitance and low gate charge. The device also offers low on-resistance and high power dissipation. Its low input capacitance ensures that the device switches quickly, and its low gate charge ensures that the device does not suffer from significant power losses.

The TPCA8103 is designed with low inductance, which enables it to achieve higher efficiency in power applications. Additionally, its extended temperature range from -40°C to +125°C (-40°F to 257°F) makes it suitable for use in automotive systems exposed to high temperatures. The device also offers excellent ON-resistance and ON-resistance matching, which improves the performance and reliability of the circuit.

The TPCA8103 is a single, vertical power MOSFET transistor with an integrated gate and source structure. It has a typical drain-source breakdown voltage of 60V, an absolute maximum drain-source voltage of 60V, and a operating temperature range of -55°C to +150°C (-67°F to 302°F). The device is constructed with a silicon gate protected by a gate oxide layer and a PN junction. It also features a drain-source through-hole for dissipating heat.

The TPCA8103 is designed for switching applications and works on the principle of majority carrier conduction. In this operating state, voltage applied to the gate causes electrons to flow from the source to the drain, creating a conducting path through the device. The device then acts as an inverter, changing the drain-source voltage from low to high or high to low based on the voltage applied to the gate.

The TPCA8103 is a cost-effective, reliable, and space-efficient single, vertical power MOSFET transistor suitable for use in automotive, handheld, and other power switching applications. It provides fast switching speed and high reliability due to its low input capacitance and low gate charge. It can operate in temperatures ranging from -40°C to +125°C, making it suitable for harsh automotive environments. Its low inductance ensures higher efficiency in power applications, and its low on-resistance provides improved circuit performance.