TPCA8045-H(T2L1,VM Allicdata Electronics
Allicdata Part #:

TPCA8045-H(T2L1VMCT-ND

Manufacturer Part#:

TPCA8045-H(T2L1,VM

Price: $ 2.37
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 40V 46A 8-SOP ADV
More Detail: N-Channel 40V 46A (Ta) 1.6W (Ta), 45W (Tc) Surface...
DataSheet: TPCA8045-H(T2L1,VM datasheetTPCA8045-H(T2L1,VM Datasheet/PDF
Quantity: 2955
1 +: $ 2.15460
10 +: $ 1.92150
100 +: $ 1.57569
500 +: $ 1.27591
1000 +: $ 1.07608
Stock 2955Can Ship Immediately
$ 2.37
Specifications
Series: U-MOSVI-H
Packaging: Cut Tape (CT) 
Part Status: Discontinued at Digi-Key
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 46A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 7540pF @ 10V
FET Feature: --
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN
Description

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The TPCA8045-H is a single MOSFET transistor with a variety of uses in electronic engineering applications. It is categorized as a single N-channel insulated gate field-effect transistor (IGFET), and it is part of a family of MOSFETs from Toshiba. It operates in the ultra-high frequency (UHF) range.

TPCA8045-H can be used in a variety of common applications such as power conversion, switching, and amplification. It is also a great choice for high speed switching and voltage clamping. Thanks to its low on-state resistance and its ability to operate at very high frequencies, it is an excellent choice for use in a variety of digital logic circuits.

The TPCA8045-H is ideal for use in Automotive and Telecommunication applications, such as mobile phones and other wireless systems. It is also ideal for power management applications, as it has a low on-state resistance of only 0.18 ohms and maximum drain-source voltage rating of up to 50 Volts.

The TPCA8045-H can be used in a variety of applications that require high speed power switching, voltage clamping, and amplification. Thanks to its high switching speeds, it is ideally suited to miniaturized systems such as cell phones. Additionally, its low on-state resistance makes it a great choice for high-frequency switching in automotive applications, where it can save both power and fuel costs.

The working principle of MOSFET transistor is quite universal. This type of transistor consists of a Drain (D), Source (S) and Gate (G) terminals. The transistor operates by passing a small current through the gate and allowing current to flow from the drain to the source. This is referred to as the “low-side” configuration because the gate receives the same voltage as the source.

In the “high-side” configuration, the drain receives thevoltage and the source. This type of configuration is used in power amplifiers, power supplies, and other applications. The high and low-side configurations are typically referred to as “on-state” and “off-state.”

The TPCA8045-H MOSFET is also designed to be used in voltage-variable applications, such as in power supplies and variable speed motors. In these types of applications, the desired voltage is applied to the gate terminal, allowing the transistor to operate in either the “high” or “low” configuration, depending on the applied gate voltage.

The TPCA8045-H MOSFET is an excellent choice for professionals and students seeking to build their own circuits and devices. Its versatile design and wide range of applications make it a great choice for those seeking a reliable, durable, and cost-effective MOSFET transistor for use in their own projects and designs.

The specific data is subject to PDF, and the above content is for reference

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