TPCA8105(TE12L,Q,M

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The TPCA8105 (TE12L, Q, M) is a single-gate, N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in low voltage, high frequency applications. This device is manufactured using the latest advancements in MOSFET technology, allowing it to perform at high speeds while consuming low power and providing high performance reliability.

The TPCA8105 is a 3 terminal device composed of a Source, Drain and Gate. The Source and Drain form the primary electrical contacts while the Gate is used to control the flow of current between the Source and Drain. The Gate consists of a metal oxide layer which acts as an insulator between the Source and Drain, allowing a small current to be applied to the Gate to switch on (or off) the flow of current between the Source and Drain.

In operation, the TPCA8105 is designed to be used in digital logic switching applications and high frequency RF amplifiers. In digital logic switching applications, the MOSFET is used to control digital signals which switch from one state to another when the Gate voltage is applied. This allows digital circuits to perform their intended function with minimal power consumption. The TPCA8105 is also used in RF amplifier designs to provide linear amplification of RF signals without distortion. This is achieved by reducing the signal distortion caused by device parasitics which could otherwise reduce the signal quality.

The TPCA8105 is designed for operation at a supply voltage of 12-24V and is capable of switching currents up to 25A. It features an on-resistance of 10 ohms at a gate voltage of 4.5V and an on-resistance of 14 ohms at a Gate voltage of 10V. It has a maximum drain-source breakdown voltage of 20V and a maximum operating temperature of 175°C. The device is available in three packages, the TE12L, Q and M.

The TPCA8105 is a low voltage, high frequency MOSFET designed to provide excellent performance, reliability and power efficiency in digital logic switching applications and high frequency RF amplifier designs. The device features a low on-resistance as well as a wide range of operating temperatures and supply voltages, making it an ideal choice for high performance applications.

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