1N1186R Allicdata Electronics
Allicdata Part #:

1242-1203-ND

Manufacturer Part#:

1N1186R

Price: $ 3.47
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE GEN PURP REV 200V 35A DO5
More Detail: Diode Standard, Reverse Polarity 200V 35A Chassis,...
DataSheet: 1N1186R datasheet1N1186R Datasheet/PDF
Quantity: 1000
100 +: $ 3.12600
Stock 1000Can Ship Immediately
$ 3.47
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 35A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: --
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Base Part Number: 1N1186R
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 1N1186R diode, classified under Diodes - Rectifiers - Single, is a fast-recovering, low reverse current rectifier ideal for switching power supplies. The primary intended application fields of the diode are fast-recovering rectifiers, freewheeling, and general rectification.

It is usually constructed with two PN junctions, which are made with two regions with unequal doping, separated by a thin region in the middle called the depletion layer. This layer lies between the N and P type regions in a PN Junction, blocking the direct application of a potential difference to the junction. At room temperature, a depletion layer will prevent the flow of current between N and P type regions. When a voltage is applied to the junction, however, the electric field generated from the voltage causes electrons from the N region and holes from the P region to move into the depletion layer, eliminating any potential difference across the junction.

This is the basic principle of the 1N1186R diode\'s operation. When a potential difference is applied between its terminals, the electric field generated causes electrons and holes to move into the depletion layer, which then rapidly change to the original state, allowing the electric current to flow. The diode is designed to minimize the charge losses in the depletion layer while providing fast reverse recovery.

The 1N1186R diode offers a number of advantages compared to other diode varieties. It has a relatively low reverse current, which minimizes the power loss associated with charge carrier recombination in the depletion layer. At the same time, the diode offers a fast reverse recovery, allowing for very efficient operation in power-conversion applications. It also offers excellent peak current protection, which protects the connected circuitry from damage in the event of a peak current.

The 1N1186R diode has a wide range of applications across many different industries. It can be used for fast-recovering rectifiers, freewheeling, general rectification, and as a low reverse current rectifier for applications such as switching power supplies. The diode also finds use in automotive systems for controlling the speed of motors or triggers for spark control.

Due to its fast-recovering performance and low reverse current, the 1N1186R diode is well-suited for a range of fast-recovering rectifiers, freewheeling, and general rectification applications in different industries. Its fast reverse recovery, low reverse current, and excellent peak current protection make it an ideal choice for use in power-conversion applications, as well as automotive and motor control applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "1N11" Included word is 40
Part Number Manufacturer Price Quantity Description
VS-1N1184RA Vishay Semic... 4.35 $ 4374 DIODE GEN PURP 100V 40A D...
VS-1N1183A Vishay Semic... 5.9 $ 6906 DIODE GEN PURP 50V 40A DO...
1N1184A GeneSiC Semi... 4.6 $ 21 DIODE GEN PURP 100V 40A D...
VS-1N1190RA Vishay Semic... 6.11 $ 96 DIODE GEN PURP 600V 40A D...
1N1184 GeneSiC Semi... 6.9 $ 97 DIODE GEN PURP 100V 35A D...
VS-1N1199A Vishay Semic... 3.19 $ 29 DIODE GEN PURP 50V 12A DO...
VS-1N1188 Vishay Semic... 4.53 $ 97 DIODE GEN PURP 400V 35A D...
1N1186AR GeneSiC Semi... 4.92 $ 53 DIODE GEN PURP REV 200V 4...
VS-1N1186RA Vishay Semic... 5.28 $ 63 DIODE GEN PURP 200V 40A D...
VS-1N1190 Vishay Semic... 6.01 $ 75 DIODE GEN PURP 600V 35A D...
VS-1N1190A Vishay Semic... 6.11 $ 58 DIODE GEN PURP 600V 40A D...
1N1186A GeneSiC Semi... 4.63 $ 55 DIODE GEN PURP 200V 40A D...
1N1190A GeneSiC Semi... 4.63 $ 220 DIODE GEN PURP 600V 40A D...
VS-1N1186 Vishay Semic... 4.71 $ 269 DIODE GEN PURP 200V 35A D...
1N1190AR GeneSiC Semi... 4.82 $ 124 DIODE GEN PURP REV 600V 4...
VS-1N1188A Vishay Semic... 6.16 $ 174 DIODE GEN PURP 400V 40A D...
VS-1N1187A Vishay Semic... 4.4 $ 11 DIODE GEN PURP 300V 40A D...
VS-1N1190R Vishay Semic... 4.77 $ 1000 DIODE GEN PURP 600V 35A D...
1N1188R GeneSiC Semi... 4.91 $ 95 DIODE GEN PURP REV 400V 3...
VS-1N1186A Vishay Semic... 4.42 $ 996 DIODE GEN PURP 200V 40A D...
VS-1N1183 Vishay Semic... 4.82 $ 9 DIODE GEN PURP 50V 35A DO...
VS-1N1184 Vishay Semic... 4.82 $ 1 DIODE GEN PURP 100V 35A D...
VS-1N1184A Vishay Semic... 5.96 $ 6 DIODE GEN PURP 100V 40A D...
1N1199A GeneSiC Semi... 2.07 $ 1000 DIODE GEN PURP 50V 12A DO...
1N1199AR GeneSiC Semi... 2.17 $ 1000 DIODE GEN PURP REV 50V 12...
VS-1N1199RA Vishay Semic... 2.47 $ 1000 DIODE GEN PURP 50V 12A DO...
VS-1N1186R Vishay Semic... 2.92 $ 1000 DIODE GEN PURP 200V 35A D...
VS-1N1187 Vishay Semic... 3.01 $ 1000 DIODE GEN PURP 300V 35A D...
1N1190R GeneSiC Semi... 3.11 $ 1000 DIODE GEN PURP REV 600V 3...
VS-1N1183R Vishay Semic... 3.23 $ 1000 DIODE GEN PURP 50V 35A DO...
VS-1N1185A Vishay Semic... 3.26 $ 1000 DIODE GEN PURP 150V 40A D...
VS-1N1188RA Vishay Semic... 3.34 $ 1000 DIODE GEN PURP 400V 40A D...
VS-1N1188R Vishay Semic... 3.39 $ 1000 DIODE GEN PURP 400V 35A D...
1N1184AR GeneSiC Semi... 3.44 $ 1000 DIODE GEN PURP REV 100V 4...
1N1183R GeneSiC Semi... 3.45 $ 1000 DIODE GEN PURP REV 50V 35...
1N1186R GeneSiC Semi... 3.47 $ 1000 DIODE GEN PURP REV 200V 3...
1N1188AR GeneSiC Semi... 3.54 $ 1000 DIODE GEN PURP REV 400V 4...
1N1187 GeneSiC Semi... -- 130 DIODE GEN PURP 300V 35A D...
1N1186 GeneSiC Semi... 3.76 $ 1000 DIODE GEN PURP 200V 35A D...
VS-1N1189A Vishay Semic... 4.01 $ 1000 DIODE GEN PURP 500V 40A D...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics