Allicdata Part #: | 1242-1203-ND |
Manufacturer Part#: |
1N1186R |
Price: | $ 3.47 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP REV 200V 35A DO5 |
More Detail: | Diode Standard, Reverse Polarity 200V 35A Chassis,... |
DataSheet: | 1N1186R Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 3.12600 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 35A |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 35A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 190°C |
Base Part Number: | 1N1186R |
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The 1N1186R diode, classified under Diodes - Rectifiers - Single, is a fast-recovering, low reverse current rectifier ideal for switching power supplies. The primary intended application fields of the diode are fast-recovering rectifiers, freewheeling, and general rectification.
It is usually constructed with two PN junctions, which are made with two regions with unequal doping, separated by a thin region in the middle called the depletion layer. This layer lies between the N and P type regions in a PN Junction, blocking the direct application of a potential difference to the junction. At room temperature, a depletion layer will prevent the flow of current between N and P type regions. When a voltage is applied to the junction, however, the electric field generated from the voltage causes electrons from the N region and holes from the P region to move into the depletion layer, eliminating any potential difference across the junction.
This is the basic principle of the 1N1186R diode\'s operation. When a potential difference is applied between its terminals, the electric field generated causes electrons and holes to move into the depletion layer, which then rapidly change to the original state, allowing the electric current to flow. The diode is designed to minimize the charge losses in the depletion layer while providing fast reverse recovery.
The 1N1186R diode offers a number of advantages compared to other diode varieties. It has a relatively low reverse current, which minimizes the power loss associated with charge carrier recombination in the depletion layer. At the same time, the diode offers a fast reverse recovery, allowing for very efficient operation in power-conversion applications. It also offers excellent peak current protection, which protects the connected circuitry from damage in the event of a peak current.
The 1N1186R diode has a wide range of applications across many different industries. It can be used for fast-recovering rectifiers, freewheeling, general rectification, and as a low reverse current rectifier for applications such as switching power supplies. The diode also finds use in automotive systems for controlling the speed of motors or triggers for spark control.
Due to its fast-recovering performance and low reverse current, the 1N1186R diode is well-suited for a range of fast-recovering rectifiers, freewheeling, and general rectification applications in different industries. Its fast reverse recovery, low reverse current, and excellent peak current protection make it an ideal choice for use in power-conversion applications, as well as automotive and motor control applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
VS-1N1184RA | Vishay Semic... | 4.35 $ | 4374 | DIODE GEN PURP 100V 40A D... |
VS-1N1183A | Vishay Semic... | 5.9 $ | 6906 | DIODE GEN PURP 50V 40A DO... |
1N1184A | GeneSiC Semi... | 4.6 $ | 21 | DIODE GEN PURP 100V 40A D... |
VS-1N1190RA | Vishay Semic... | 6.11 $ | 96 | DIODE GEN PURP 600V 40A D... |
1N1184 | GeneSiC Semi... | 6.9 $ | 97 | DIODE GEN PURP 100V 35A D... |
VS-1N1199A | Vishay Semic... | 3.19 $ | 29 | DIODE GEN PURP 50V 12A DO... |
VS-1N1188 | Vishay Semic... | 4.53 $ | 97 | DIODE GEN PURP 400V 35A D... |
1N1186AR | GeneSiC Semi... | 4.92 $ | 53 | DIODE GEN PURP REV 200V 4... |
VS-1N1186RA | Vishay Semic... | 5.28 $ | 63 | DIODE GEN PURP 200V 40A D... |
VS-1N1190 | Vishay Semic... | 6.01 $ | 75 | DIODE GEN PURP 600V 35A D... |
VS-1N1190A | Vishay Semic... | 6.11 $ | 58 | DIODE GEN PURP 600V 40A D... |
1N1186A | GeneSiC Semi... | 4.63 $ | 55 | DIODE GEN PURP 200V 40A D... |
1N1190A | GeneSiC Semi... | 4.63 $ | 220 | DIODE GEN PURP 600V 40A D... |
VS-1N1186 | Vishay Semic... | 4.71 $ | 269 | DIODE GEN PURP 200V 35A D... |
1N1190AR | GeneSiC Semi... | 4.82 $ | 124 | DIODE GEN PURP REV 600V 4... |
VS-1N1188A | Vishay Semic... | 6.16 $ | 174 | DIODE GEN PURP 400V 40A D... |
VS-1N1187A | Vishay Semic... | 4.4 $ | 11 | DIODE GEN PURP 300V 40A D... |
VS-1N1190R | Vishay Semic... | 4.77 $ | 1000 | DIODE GEN PURP 600V 35A D... |
1N1188R | GeneSiC Semi... | 4.91 $ | 95 | DIODE GEN PURP REV 400V 3... |
VS-1N1186A | Vishay Semic... | 4.42 $ | 996 | DIODE GEN PURP 200V 40A D... |
VS-1N1183 | Vishay Semic... | 4.82 $ | 9 | DIODE GEN PURP 50V 35A DO... |
VS-1N1184 | Vishay Semic... | 4.82 $ | 1 | DIODE GEN PURP 100V 35A D... |
VS-1N1184A | Vishay Semic... | 5.96 $ | 6 | DIODE GEN PURP 100V 40A D... |
1N1199A | GeneSiC Semi... | 2.07 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
1N1199AR | GeneSiC Semi... | 2.17 $ | 1000 | DIODE GEN PURP REV 50V 12... |
VS-1N1199RA | Vishay Semic... | 2.47 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
VS-1N1186R | Vishay Semic... | 2.92 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1187 | Vishay Semic... | 3.01 $ | 1000 | DIODE GEN PURP 300V 35A D... |
1N1190R | GeneSiC Semi... | 3.11 $ | 1000 | DIODE GEN PURP REV 600V 3... |
VS-1N1183R | Vishay Semic... | 3.23 $ | 1000 | DIODE GEN PURP 50V 35A DO... |
VS-1N1185A | Vishay Semic... | 3.26 $ | 1000 | DIODE GEN PURP 150V 40A D... |
VS-1N1188RA | Vishay Semic... | 3.34 $ | 1000 | DIODE GEN PURP 400V 40A D... |
VS-1N1188R | Vishay Semic... | 3.39 $ | 1000 | DIODE GEN PURP 400V 35A D... |
1N1184AR | GeneSiC Semi... | 3.44 $ | 1000 | DIODE GEN PURP REV 100V 4... |
1N1183R | GeneSiC Semi... | 3.45 $ | 1000 | DIODE GEN PURP REV 50V 35... |
1N1186R | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP REV 200V 3... |
1N1188AR | GeneSiC Semi... | 3.54 $ | 1000 | DIODE GEN PURP REV 400V 4... |
1N1187 | GeneSiC Semi... | -- | 130 | DIODE GEN PURP 300V 35A D... |
1N1186 | GeneSiC Semi... | 3.76 $ | 1000 | DIODE GEN PURP 200V 35A D... |
VS-1N1189A | Vishay Semic... | 4.01 $ | 1000 | DIODE GEN PURP 500V 40A D... |
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