| Allicdata Part #: | 1N1187RGN-ND |
| Manufacturer Part#: |
1N1187R |
| Price: | $ 4.62 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | GeneSiC Semiconductor |
| Short Description: | DIODE GEN PURP REV 300V 35A DO5 |
| More Detail: | Diode Standard, Reverse Polarity 300V 35A Chassis,... |
| DataSheet: |  1N1187R Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 4.15668 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard, Reverse Polarity |
| Voltage - DC Reverse (Vr) (Max): | 300V |
| Current - Average Rectified (Io): | 35A |
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 35A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 10µA @ 50V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Chassis, Stud Mount |
| Package / Case: | DO-203AB, DO-5, Stud |
| Supplier Device Package: | DO-5 |
| Operating Temperature - Junction: | -65°C ~ 190°C |
| Base Part Number: | 1N1187R |
Description
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Diodes - Rectifiers - Single
1N1187R is a silicon rectifier diode. It is widely used in both commercial and industrial applications, from power supplies and converters to alternators and more. The 1N1187R is a fast recovery rectifier with a low forward voltage drop and high power dissipation.
The application field of the 1N1187R rectifier diode includes power supply, electronics, telecommunication, computer and industrial devices, automotive, and consumer appliances. The 1N1187R is effective in controlling high voltage, protecting surge voltage and avoiding polarity reverse, etc. It is also applicable to rectifying single or double AC power or DC boost, or as a rectifying element of AC-DC rectifiers or switching power supplies. The 1N1187R is also suitable for various types of lighting circuits, all kinds of converters, and phase-controlled rectifiers.
The working principle of the 1N1187R is based on the PN junction diode. The PN junction diode has a large number of small P-type areas and N-type areas in the material, and an electric field will be formed in the boundary of these small areas. A current flows in the circuit when an enough voltage difference is exist between two terminals of the PN junction diode.
Under the reverse bias, the electric field between the two areas can block the electron and hole pairs coming from the outside, which prevent current from flowing. When a forward bias is applied, the electric field between the two areas will be weakened and it allows the electrons and holes pairs to forward the junction. As a result, a small current is flowing from the P side to the N side. With an increase of voltage, an increase of current is generated until it reaches a certain value and this is called the forward conduction region.
When an AC signal is applied to the 1N1187R rectifier, it will form a rectifying effect. Each successive PN junction will rectify the AC current into pulsating DC voltage. The 1N1187R can also withstand higher power and heat, as it is capable of dissipating up to 1W of power and it will not overheat even when used under high wattage DC power supply.
In conclusion, the 1N1187R rectifier diode is a versatile component, suitable for multiple applications, such as power supplies, converters, switching power supplies, and lighting circuits, etc. Its PN junction technology makes it fast-recovery, low forward voltage drop, and high power dissipation. With its high performance and reliability, the 1N1187R rectifier diode is a great choice for various industrial and commercial applications.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| VS-1N1190A | Vishay Semic... | 6.11 $ | 58 | DIODE GEN PURP 600V 40A D... |
| 1N1186A | GeneSiC Semi... | 4.63 $ | 55 | DIODE GEN PURP 200V 40A D... |
| 1N1190A | GeneSiC Semi... | 4.63 $ | 220 | DIODE GEN PURP 600V 40A D... |
| VS-1N1186 | Vishay Semic... | 4.71 $ | 269 | DIODE GEN PURP 200V 35A D... |
| 1N1190AR | GeneSiC Semi... | 4.82 $ | 124 | DIODE GEN PURP REV 600V 4... |
| VS-1N1188A | Vishay Semic... | 6.16 $ | 174 | DIODE GEN PURP 400V 40A D... |
| VS-1N1187A | Vishay Semic... | 4.4 $ | 11 | DIODE GEN PURP 300V 40A D... |
| VS-1N1190R | Vishay Semic... | 4.77 $ | 1000 | DIODE GEN PURP 600V 35A D... |
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| VS-1N1186A | Vishay Semic... | 4.42 $ | 996 | DIODE GEN PURP 200V 40A D... |
| VS-1N1183 | Vishay Semic... | 4.82 $ | 9 | DIODE GEN PURP 50V 35A DO... |
| VS-1N1184 | Vishay Semic... | 4.82 $ | 1 | DIODE GEN PURP 100V 35A D... |
| VS-1N1184A | Vishay Semic... | 5.96 $ | 6 | DIODE GEN PURP 100V 40A D... |
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| VS-1N1199RA | Vishay Semic... | 2.47 $ | 1000 | DIODE GEN PURP 50V 12A DO... |
| VS-1N1186R | Vishay Semic... | 2.92 $ | 1000 | DIODE GEN PURP 200V 35A D... |
| VS-1N1187 | Vishay Semic... | 3.01 $ | 1000 | DIODE GEN PURP 300V 35A D... |
| 1N1190R | GeneSiC Semi... | 3.11 $ | 1000 | DIODE GEN PURP REV 600V 3... |
| VS-1N1183R | Vishay Semic... | 3.23 $ | 1000 | DIODE GEN PURP 50V 35A DO... |
| VS-1N1185A | Vishay Semic... | 3.26 $ | 1000 | DIODE GEN PURP 150V 40A D... |
| VS-1N1188RA | Vishay Semic... | 3.34 $ | 1000 | DIODE GEN PURP 400V 40A D... |
| VS-1N1188R | Vishay Semic... | 3.39 $ | 1000 | DIODE GEN PURP 400V 35A D... |
| 1N1184AR | GeneSiC Semi... | 3.44 $ | 1000 | DIODE GEN PURP REV 100V 4... |
| 1N1183R | GeneSiC Semi... | 3.45 $ | 1000 | DIODE GEN PURP REV 50V 35... |
| 1N1186R | GeneSiC Semi... | 3.47 $ | 1000 | DIODE GEN PURP REV 200V 3... |
| 1N1188AR | GeneSiC Semi... | 3.54 $ | 1000 | DIODE GEN PURP REV 400V 4... |
| 1N1187 | GeneSiC Semi... | -- | 130 | DIODE GEN PURP 300V 35A D... |
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