1N3008B Allicdata Electronics
Allicdata Part #:

1N3008B-ND

Manufacturer Part#:

1N3008B

Price: $ 17.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 120V 10W DO213AA
More Detail: Zener Diode 120V 10W ±5% Chassis, Stud Mount DO-21...
DataSheet: 1N3008B datasheet1N3008B Datasheet/PDF
Quantity: 1000
100 +: $ 15.33260
Stock 1000Can Ship Immediately
$ 17.04
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 120V
Tolerance: ±5%
Power - Max: 10W
Impedance (Max) (Zzt): 75 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 91.2V
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
Operating Temperature: -65°C ~ 175°C
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-213AA
Base Part Number: 1N3008
Description

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A 1N3008B diode is a type of single electron Zener diode that is widely used in a variety of electronic devices. Zener diodes are used to regulate high-powered voltages and currents. They are also used in a variety of other applications, ranging from switching power supplies, to data line protection, to transistors. The 1N3008B Zener diode is a high voltage rectifier, usually rated for a maximum reverse breakdown voltage up to 300 volts. Due to its high breakdown voltage, it is a common choice for protecting sensitive components from overvoltage transients or lightning surges.

The 1N3008B diode consists of an active region that contains electrons and lattice points. This active region is composed of a semiconductor material, such as silicon, germanium, and/or selenium. The material is chosen based on the desired breakdown voltage of the diode. The electrons and lattice points in the active region create a rectifying junction, which allows conduction in one direction, but blocks conduction in the opposite direction. This allows a voltage across the diode to exceed the breakdown voltage for a brief period of time without the device failing.

The working principle of a 1N3008B diode is based on its reverse breakdown voltage. The resistance of a typical diode is proportional to the voltage across it; when the voltage rises above the reverse breakdown voltage, the resistance of the diode abruptly drops. This abrupt drop in resistance allows a large current to flow, which causes the voltage to drop to the breakdown voltage. This process is repeated as the voltage across the diode is increased, which is why it is called the avalanche effect.

The 1N3008B diode is used in many applications, ranging from energy conversion, semiconductor switching, and data communications. It is often used in power converters to regulate large voltages and currents, as well as to protect sensitive components such as transistors or sensors from unexpected power surges. The 1N3008B diode is also used in data communications to help protect data lines from lightning surges.

In summary, the 1N3008B diode is a single Zener diode used in a variety of applications. It is designed to regulate high-powered voltages and currents and is used to protect sensitive components from unexpected power surges. The 1N3008B diode uses an active region composed of a semiconductor material that creates a rectifying junction to allow conduction in one direction and to block conduction in the opposite direction. The device works by utilizing the reverse breakdown voltage to abruptly drop the diode\'s resistance, allowing a large current to flow to regulate large voltages and currents. The 1N3008B diode is used in a variety of applications, ranging from energy conversion, semiconductor switching, and data communications, to protect sensitive components from unexpected power surges.

The specific data is subject to PDF, and the above content is for reference

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