1N3034BUR-1 Allicdata Electronics
Allicdata Part #:

1N3034BUR-1-ND

Manufacturer Part#:

1N3034BUR-1

Price: $ 6.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE ZENER 39V 1W DO213AB
More Detail: Zener Diode 39V 1W ±5% Surface Mount DO-213AB
DataSheet: 1N3034BUR-1 datasheet1N3034BUR-1 Datasheet/PDF
Quantity: 1000
100 +: $ 6.02759
Stock 1000Can Ship Immediately
$ 6.7
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Voltage - Zener (Nom) (Vz): 39V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 60 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 29.7V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: DO-213AB
Base Part Number: 1N3034
Description

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Diodes - Zener - Single

The 1N3034BUR-1 is part of the 1N3000B series of voltage regulator diode products, providing precise, predictable regulation of voltage in various applications. The 1N3034BUR-1, specifically, is rated to deliver up to 30 volts with an operating temperature of -65 to +175 °C.

Application Field

Being part of the Zener Diode family, the 1N3034BUR-1 is suitable for applications where precise and predictable regulation of voltage is needed. One example is in voltage regulation for industrial and medical equipment, both of which require high levels of stability and accuracy when monitoring fluctuations in voltage from the power source. Automotive power sources, such as car batteries, also require precise voltage control, as any sudden spikes or drops in voltage can potentially damage critical electrical components.

The 1N3034BUR-1 can also be used for current limit protection, surge protection and temperature stability. Using the diode in temperature stability applications can help reduce power consumption, thus leading to improved product life expectancy.

Working Principle

As a Zener Diode, the 1N3034BUR-1 takes advantage of the avalanche breakdown effect, a phenomenon observed in semiconductor materials when electrons move across the p-n junction. This occurs when the P-N junction reaches a certain breakdown voltage, which is established depending on the operating temperature, ionization energy and other characteristics of the material.

When this breakdown voltage is reached, electrons will flow in the reverse bias direction and will keep expanding the depletion region, allowing more current to flow across the p-n junction. The excess current will flow through the diode and other components until the current is clamped to a specific value. By limiting the flow of current, this clamped value of voltage is then provided at the output of the 1N3034BUR-1 and serves as the regulated output voltage.

The 1N3034BUR-1 is also designed to withstand high photon and thermal energy, protecting against electrostatic discharge, electromagnetic interference and excessive noise from the power source. Additionally, the resistor inside the diode is designed to minimize RF oscillation, protecting against interference from other components, and to minimize power dissipation to extend the diode’s lifespan. This combination of features allows the 1N3034BUR-1 to provide excellent protection against fluctuations in voltage and temperature.

Conclusion

Overall, the 1N3034BUR-1 is an ideal solution for applications where stability and accuracy are key considerations. Its precise voltage regulation, excellent thermal and photon protection and its ability to minimize RF oscillation make it an excellent choice for automotive power sources, industrial, medical and temperature stability applications.

The specific data is subject to PDF, and the above content is for reference

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