1N4001GL-T Allicdata Electronics
Allicdata Part #:

1N4001GL-T-ND

Manufacturer Part#:

1N4001GL-T

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE GEN PURP 50V 1A DO41
More Detail: Diode Standard 50V 1A Through Hole DO-41
DataSheet: 1N4001GL-T datasheet1N4001GL-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N4001
Description

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1N4001GL-T Application Field and Working Principle

The 1N4001GL-T is a general-purpose diode, classified under the Diodes & Rectifiers & Single category. It is an ideal device for a wide range of low power applications and projects. The 1N4001GL-T is a general-purpose rectifier diode with a forward voltage drop of up to 1.0V and an operating temperature of up to +150°C, making it suited for miniature power supplies and other low-power solutions. The major application of 1N4001GL-T diode is to provide protection for electronic equipment in applications such as automotive, lighting, and power.

1N4001GL-T rectifier diode is a black semiconductor material device which conduct electricity while in forward bias and block it while in reverse bias. The 1N4001GL-T has a maximum reverse current of 1mA and a forward current of 1 Amp. It is a 60V power diode with a low forward voltage drop of 0.7 - 0.9V. The 1N4001GL-T also has an operational temperature range of -55 to 150°C and it is RoHS compliant.

The working principle of the 1N4001GL-T rectifier diode is based on the effect of the PN junction. When a voltage bias is applied to the diode, current flows in the forward direction and it does not flow in the reverse direction. This is done by having the majority carriers on either side of the PN Junction act as a barrier for current conduction. For instance, in the case of a P-type material, the majority carriers are negative electrons and the N-type material has majority carriers in the form of positive holes. With a reverse bias across the PN junction, a depletion region is formed and majority carriers on both sides of the junction are depleted, thus preventing current flow.

The 1N4001GL-T rectifier diode features many advantages over other rectifier diodes. It provides a low forward voltage drop and has a maximum reverse current of 1mA, thus ensuring it stays protected against any reverse voltage surges. The 1N4001GL-T is also RoHS compliant, so it can be used in a wide variety of applications. Additionally, it is highly reliable, due to its low forward voltage drop and its high resistance to overload.

The 1N4001GL-T rectifier diode is an ideal choice for a variety of low power applications and projects. It can be used to provide protection for electronic equipment such as automotive, lighting, and power supplies. It is highly reliable due to its low forward voltage drop and its high resistance to overload. Furthermore, it is RoHS compliant, thus allowing for its use in a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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