1N4007T-G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	1000V
Current - Average Rectified (Io):	1A
Voltage - Forward (Vf) (Max) @ If:	1.1V @ 1A
Speed:	Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr:	5µA @ 1000V
Capacitance @ Vr, F:	15pF @ 4V, 1MHz
Mounting Type:	Through Hole
Package / Case:	DO-204AL, DO-41, Axial
Supplier Device Package:	DO-41
Operating Temperature - Junction:	-55°C ~ 150°C
Base Part Number:	1N4007

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1N4007T-G Diodes are usually used in the rectification of an AC signal. The 1N4007T-G Diode is a single-phase rectifier diode which consists of a PN-junction and is commonly used in power supply applications. It is used to convert an alternating current (AC) into a unidirectional current (DC) with a voltage drop across the diode.1N4007T-G Diodes are manufactured from a range of materials and their construction is based on the required characteristics, for example, the type of material used in the diode, the structure of the diode, and the doping concentration of the diode. In general, the 1N4007T-G Diode consists of a cathode, an anode and a PN junction.The 1N4007T-G Diode has a low forward voltage drop of around 0.7V and a high reverse leakage current of around 10 μA, making it a suitable choice for power applications. It is also a relatively cheap and reliable device that can be used in a variety of applications.The 1N4007T-G Diode has a wide range of applications and can be used in a number of different rectifier circuits, converters, and power supplies, depending on the desired output parameters. One of the most common applications of the 1N4007T-G Diode is in power supplies, where it is used to rectify AC signals into DC signals, allowing the user to control the voltage and current of a particular device or circuit.The 1N4007T-G Diode is also often used in the rectification of current pulses and the protection of sensitive devices from voltage spikes.The working principle of the 1N4007T-G Diode is based on the electric properties of a PN-junction. The PN-junction consists of two layers of semiconducting material, one layer doped with impurities which acts as the cathode, and the other layer doped with impurities which acts as the anode. The PN-junction forms a barrier between the two layers which prevents current from flowing between them in the reverse direction. When a forward voltage is applied across the diode, the PN-junction barrier allows the current to pass in the forward direction, allowing the conversion of AC current into DC current. This allows the user to control the voltage and current of their device or circuit.The 1N4007T-G Diode has a number of advantages over other rectifying diodes; it is relatively cheap and reliable, it has a very low forward voltage drop, and it has a high reverse leakage current. This makes it an ideal choice for power applications.The 1N4007T-G Diode is a single-phase rectifier diode manufactured from a range of materials and its structure is based on its required characteristics, such as type of material used, the structure of the diode, and its doping concentrations. It is used to convert alternating current (AC) into unidirectional current (DC) with a voltage drop across the diode. The 1N4007T-G Diode is commonly used in power supplies and in the rectification of current pulses and the protection of sensitive devices from voltage spikes. The working principle of the 1N4007T-G Diode is based on the electric properties of a PN-junction. In conclusion, the 1N4007T-G Diode is a reliable and inexpensive solution for many rectifying and power applications. Its low forward voltage drop and high reverse leakage current make it an ideal choice for use in power supplies, converters, and rectifier circuits. Furthermore, its relatively simple working principle based on the PN-junction allows for a high degree of control over the voltage and current of a device or circuit.

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