Allicdata Part #: | 1N4003E-E3/73GITB-ND |
Manufacturer Part#: |
1N4003E-E3/73 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO204AL |
More Detail: | Diode Standard 200V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | 1N4003E-E3/73 Datasheet/PDF |
Quantity: | 18000 |
3000 +: | $ 0.03743 |
6000 +: | $ 0.03255 |
15000 +: | $ 0.02766 |
30000 +: | $ 0.02604 |
75000 +: | $ 0.02441 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | 1N4003 |
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A 1N4003E-E3/73 is an example of a single rectifier diode, an electrical component made up of two terminal leads, or electrodes, with a series of anodes, cathodes, and supporting structures in between. Composed mainly of silicon or germanium, these devices are built to control and regulate the direction, intensity, and phase of electrical power flowing through a circuit. The 1N4003 specifically is designed as a switching diode, and as such has several specific applications, as well as an important working principle.
The 1N4003E-E3/73 rectifier diode is most commonly used as a basic reed switch contact closure device. A reed switch is essentially a type of form contact switch, which is composed of two small and narrow ferromagnetic metal reeds, which are sealed in airtight glass contact forms. When a current or magnetic field is applied to the switch, the two reeds will be drawn together with a strength proportional to the applied force. By wrapping a diode around the reed switch contact form, it serves to protect the switch from damage due to isolated reverse voltage.
Additionally, the 1N4003E-E3/73 is also used to protect other components in a circuit from over voltage. The diode is designed with a volts breakdown rating of seventy-three, meaning it can withstand up to that much volts before it needs to be replaced. Moreover, the 1N4003E-E3/73 is a good choice for applications that require higher currents than a regular rectifier diode can handle as it is designed to carry currents of up to three hundred milliamperes.
The basic construction of a diode consists of two layers: an anode and a cathode. Electron flow between the anode and cathode can move in one direction but not the other, allowing it to regulate the flow of current through a circuit. This is known as rectification, since the purpose of a rectifier device is to convert alternating current (AC) to direct current (DC). The 1N4003E-E3/73’s primary purpose is to block any current flowing \"backwards\" through a circuit – its useful for protecting against any unexpected down surge of power.
Dimensions for the 1N4003E-E3/73 are 7.9 millimeters by 7.51 millimeters, or 0.3 inches by 0.3 inches. The diode has a nominal forward voltage drop across its two wires of between 0.887 and 0.9 volts. The forward current at 75°C can handle up to three hundred milliamperes and the Leakage current at the same temperature is 0.02 mA. The rate of reverse recovery time is 0.6 µs
In summary, a 1N4003E-E3/73 single rectifier diode is designed primarily as a switching diode used mainly as a reed switch contact closure device, or to protect other components in a circuit from overvoltage. This diode has a volts breakdown rating of seventy-three and can carry currents of up to three hundred milliamperes. Its dimensions are 7.9 millimeters by 7.5 millimeters and has a nominal forward voltage drop across its two wires of between 0.887 and 0.9 volts.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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