Allicdata Part #: | 641-1967-ND |
Manufacturer Part#: |
1N4007B-G |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Comchip Technology |
Short Description: | DIODE GEN PURP 1KV 1A DO41 |
More Detail: | Diode Standard 1000V 1A Through Hole DO-41 |
DataSheet: | 1N4007B-G Datasheet/PDF |
Quantity: | 715 |
1 +: | $ 0.11340 |
10 +: | $ 0.10143 |
100 +: | $ 0.06647 |
500 +: | $ 0.03248 |
1000 +: | $ 0.02214 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | 1N4007 |
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Diodes - Rectifiers - Single
The 1N4007B-G diode is an important part of the range of diodes for use in power conversion and rectification applications. These single-phase, silicon devices are designed for general purpose applications in power electronic systems. This diode is specifically designed for use in high-voltage circuits, operating mainly in the forward conduction direction. It provides good forward current conduction, high reverse current blocking capability, and low forward voltage drop.
Application Field
Applications for 1N4007B-G diode include AC to DC conversion, rectification of power signals, Silicon Controlled Rectifiers (SCR) and capacitor charging. The diode is suitable for use in applications ranging from consumer electronics to automotive and other industrial machinery. It is particularly well suited to high-voltage, single-phase rectification in power supplies including those used in computer and consumer electronics, lighting control, and motor control.
Working Principle
1N4007B-G diodes have a single anode and a single cathode. In forward conduction, the diode acts as a low resistance path, or a conduit, for current flow. In reverse conduction, this device is able to block current flow. The low forward voltage drop is achieved in part by the relatively low internal resistance of the diode. This low voltage drop helps reduce power losses due to conversion inefficiency.
When current flows through the diode, it creates a voltage drop across the diode. This voltage drop is maintained until the diode reaches its breakdown voltage. At this point, the diode is not able to block current flow and it becomes a short circuit. The reverse breakdown voltage, however, can be very high depending on the design of the diode. The voltage drop in forward conduction should not exceed the rated forward voltage of the diode, otherwise the diode will be subjected to thermal overload.
The anode of the 1N4007B-G is designed for high current applications. The cathode is designed to absorb the maximum currents without losing its reverse voltage blocking capabilities. This diode is also designed to withstand voltage spikes that may occur during operation, such as those generated by circuit switching.
Conclusion
The 1N4007B-G diode is a versatile and reliable single-phase diode used in many power conversion and rectification applications. It provides good forward current conduction while offering a low forward voltage drop to reduce power losses. The reverse breakdown voltage can be very high depending on the design of the diode. In addition, the anode and cathode are designed for high current operations and to absorb voltage spikes.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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