Allicdata Part #: | 1N4002GPE-M3/73-ND |
Manufacturer Part#: |
1N4002GPE-M3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURPOSE DO-204AL |
More Detail: | Diode |
DataSheet: | 1N4002GPE-M3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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Diodes are semiconductor devices that allow electric current to flow in one direction only, consisting of two electrodes (anode and cathode), usually of a metallic conductor. A rectifier is a diode that has been selected and designed for a specific purpose. Rectifier diodes are primarily used for converting alternating current (AC) to direct current (DC).
The 1N4002GPE-M3/73 is a single rectifier diode, featuring two electrodes, an anode and a cathode. The 1N4002GPE-M3/73 has a maximum operating temperature of 150°C, and a suffix ‘GPE’ implies enhanced surge capability. This rectifier diode features an axial package, with an encapsulated power hermetic glass and metal outer case.
The primary application fields of the 1N4002GPE-M3/73 includes motor controls, UPS, switching and linear power supplies, low-voltage power supplies, and rectification. The parametric characteristics of this product includes a forward and reverse voltage range of 50V and 20V respectively, a peak repetitive reverse voltage of 200V and a peak non-repetitive reverse voltage of 400V. It has a typical forward voltage of 1.1V, a maximum forward surge current of 30A and a junction temperature of 150°C.
The 1N4002GPE-M3/73 applies the principle of a PN junction in which the flow of electrons is arrested in one particular direction, but allowed to flow in the other direction. The PN junction is a part of a p-type semiconductor and an n-type semiconductor, in which battery supplies the forward biasing of the PN junction for it to function. When a voltage higher than the forward biasing voltage is applied to the PN junction, it starts to conduct the electric current in the existing direction.
Bias Voltage is applied to the PN junction and at a certain level, called the Cut-in Voltage, current begins to flow, and this happens due to the electron-hole diffusion. The electrons from the n-type material will pass through the depletion region and enter the p-type material which creates a thin layer of negative charge inside the p-type. Conversely, the holes from the p-type material enter the depletion region, and get attracted by the negative charge of the depletion region. As a result, the electric current starts to pass through the PN junction.
The 1N4002GPE-M3/73 is a principle of rectification because it allows only the positive part of the alternate current to pass through, or in other words, only the positive half of the AC wave, to pass through the blocking diode and the negative part passes through the current leakage path or the bypassed electrical resistance.
The 1N4002GPE-M3/73 operates on a reduced power dissipation due to its low forward voltage drop. It also offers higher operating temperature and low forward voltage, with a high reverse current leakage resistance. Additionally, due to its high breakdown voltage, the 1N4002GPE-M3/73 has a low leakage current even after Transient Overvoltage conditions.
The 1N4002GPE-M3/73 is a single rectifier diode primarily designed for use in AC-to-DC power conversion applications, primarily providing filtering and regulating current in power supplies. It is typically used for the rectification process in motor control systems, switching and linear power supplies, and low-voltage applications. Additionally, it also offers enhanced surge capability and low forward voltage.
The specific data is subject to PDF, and the above content is for reference
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