Allicdata Part #: | 1N4004GPE-M3/73-ND |
Manufacturer Part#: |
1N4004GPE-M3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1A DO204AL |
More Detail: | Diode Standard 400V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | 1N4004GPE-M3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -50°C ~ 150°C |
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1N4004GPE-M3/73 single diodes are widely utilized in miniature, low-voltage power supplies and various electronic equipment. 1N4004GPE-M3/73 diodes offer a majority of general purpose power supply needs, including full wave rectification for circuits in support of use under low input and output voltages. These diodes are also ideal for power supplies with high surge, low-voltage applications, such as LED lighting and other types of circuits.
1N4004GPE-M3/73 diodes are composed of a PN-junction device in which a single p-type and a single n-type semiconductor are combined. The PN-junction allows for majority carriers, electrons, to be forced from the n-type layer to the p-type layer. The movement of electrons is referred to as conduction.
The diode is coated with a thin film of insulating plastic to reduce capacitive coupling that can cause interference and other electrical noise. As the electrons flow, they collide with the atoms of the PN-junction, releasing energy in the form of heat, light, and other forms of electromagnetic radiation. This energy is dissipated in the form of light visible to the eye.
The anode of the 1N4004GPE-M3/73 diode is the positive terminal and the cathode is the negative terminal. When a voltage is applied across the anode and the cathode, a potential difference is created across the two electrodes, creating a current flow. The direction of current flow in a diode is determined by the polarity of the applied voltage.
When a forward bias voltage is applied to the anode and cathode, a small amount of current can flow through the diode, allowing for conduction to occur. This flow of current causes electrons to be forced from the anode to the cathode, creating a voltage drop across the diode to reduce the total voltage supplied. When a reverse bias voltage is applied to the 1N4004GPE-M3/73 diode, it will not allow current flow.
The 1N4004GPE-M3/73 diode is a versatile, high-speed device designed to operate at a maximum reverse leakage current of 25 mA and reverse voltage of 600V. Its high-speed response makes it suitable for applications requiring a fast switching speed and low operating voltage, including voltage clamping, overvoltage protection, and current-limiting. It can also be used in power supplies, pulse power circuits, and audio amplifiers.
The 1N4004GPE-M3/73 single diode is an ideal choice for general-purpose power supply needs, providing low voltages, small size, and high-speed response. It is capable of withstanding up to 600 volts reverse voltage and for currents up to 25 mA, making it suitable for a wide range of applications including rectification, voltage clamping, and current-limiting applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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