1N4005-N-2-2-BP Allicdata Electronics
Allicdata Part #:

1N4005-N-2-2-BPMS-ND

Manufacturer Part#:

1N4005-N-2-2-BP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 600V 1A DO-41
More Detail: Diode Standard 600V 1A (DC) Through Hole DO-41
DataSheet: 1N4005-N-2-2-BP datasheet1N4005-N-2-2-BP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The 1N4005-N-2-2-BP is a single rectifier diode, commonly used in both commercial and industrial electronics. It is used in applications such as bridge rectification, current limiting, reverse-voltage protection, switching, and voltage regulation.The diode is designed to guard against large current surges and faithfully regulate the applied voltage. The 1N4005- N-2-2-BP is known for its robustness and reliability, featuring a robust case and high current capability.A rectifier diode is a type of semiconductor diode specifically designed to convert alternating current (AC) to direct current (DC). This process is known as rectification. Semiconductor diodes are responsible for the flow of electrons from one side of a circuit to the other, controlled by the applied voltage.A diode consists of two regions, the P-type and the N-type. The P-type region is made up of positively-charged charge carriers, while the N-type region is made up of negatively-charged charge carriers. The diodes’ properties are determined by their semiconductor material, which affects the barrier voltage, junction capacitance, and other related factors.The 1N4005-N-2-2-BP diode features two layers of P-type and N-type material. There is a layer of P-type material on one side followed by two layers of N-type material. This configuration is called a double-morphology or dual PN junction.When the diode is forward biased, a large amount of electrons move from the N-type region to the P-type region and create a flow of current. This is known as the forward conduction mode. When the diode is reverse biased, the current through the diode ceases as the barrier voltage prevents the flow of electrons. This is known as the reverse blocking mode.The 1N4005-N-2-2-BP is designed to handle high-voltage surges and regulate the applied voltage. The device features low forward voltage drop, high current capability, and low thermal resistance. It is ideal for applications such as UPS systems, power supplies, and DC motor control. It is also suitable for automotive, outdoor, and industrial applications.The 1N4005-N-2-2-BP is a reliable and robust device that is easy to install and use. It is a durable and cost-effective solution for many applications and is used widely in the commercial and industrial electronics market.

The specific data is subject to PDF, and the above content is for reference

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