1N4005 Allicdata Electronics
Allicdata Part #:

1N4005MSTR-ND

Manufacturer Part#:

1N4005

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 600V 1A DO41
More Detail: Diode Standard 600V 1A Through Hole DO-41
DataSheet: 1N4005 datasheet1N4005 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: 1N4005
Description

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1N4005 is a member of the popular 1N400x series of rectifier diodes; it is used as a general purpose rectifier. This family of rectifiers comes in a variety of packages, such as the TO-220, TO-247 and many others.The 1N4005 is a single phase, silicon, general purpose rectifier. It is designed for use in low voltage, high frequency applications such as switching power supplies, converters, servo controls and other general rectification applications. It is capable of passing up to 1A of current with a maximum repetitive peak reverse voltage of 50V.

What is the application field of a 1N4005 diode? Diodes have many applications; however, the common applications for a 1N4005 are for rectifying AC current, such as in a power adapter, or for protection against transient voltages, such as in a cell phone charger. The 1N4005 can also be used as an anti-parallel diode with a transistor in a bridge rectifier circuit.

The working principle of the 1N4005 diode begins with the use of semiconductor materials like silicon to create a diode junction. The diode is a two-terminal device with a cathode(-ve electrode) and an anode (+ve electrode). A PN junction is created between the two electrodes. When voltage is applied to the diode, the intensity of the electric field across the junction is increased, and the electrons and holes move towards the junction. When the voltage reaches the breakdown voltage, a small current will start to flow across the junction. This is known as Forward Biased Current.

The Forward Biased Current is the result of the electrons and holes crossing the junction in opposite directions, creating a current. As the current increases, it creates an electric field which opposes the forward bias, and the current stabilizes at a level known as the Forward Saturation Current. This is the current which flows through the diode when it is in the forward biased state.

In the reverse bias state, the electric field across the junction becomes stronger, and the electrons and holes move away from the junction., which creates a depletion region with no electron or hole carriers. This creates what is known as a reverse-bias voltage or reverse bias current. The size of the reverse bias current is determined by the amount of electric field applied to the junction, as well as any leakage current.

The 1N4005 diode has a maximum repetitive peak reverse voltage of 50V, and is usually used in applications involving rectification of alternating current. A bridge rectifier circuit is generally used for this purpose, as it allows for full-wave rectification. This type of circuit consists of four diode bridges, such as the 1N4005, with the input AC voltage applied across two of the bridges and the output DC voltage being taken from the other two bridges.

The 1N4005 diode, with its low reverse breakdown voltage, makes it suitable for general purpose rectification applications. Furthermore, it is available in a variety of packages, making it a versatile and cost-effective choice for most applications.

The specific data is subject to PDF, and the above content is for reference

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