1N4005GPEHE3/73 Allicdata Electronics
Allicdata Part #:

1N4005GPEHE3/73-ND

Manufacturer Part#:

1N4005GPEHE3/73

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 600V 1A DO204AL
More Detail: Diode Standard 600V 1A Through Hole DO-204AL (DO-4...
DataSheet: 1N4005GPEHE3/73 datasheet1N4005GPEHE3/73 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SUPERECTIFIER®
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: 1N4005
Description

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1N4005GPEHE3/73 diodes are a type of single rectifiers which code consists of a number and letter combination. The prefix “1N” indicates that the diode is a general purpose semiconductor device, and the letter “G” indicates a higher voltage rating than regular components. Furthermore, the letters “PE” indicate a plastic package, while the letters “HE” indicates a higher corrosion resistance. Finally, the numbers “3/73“ indicate the product manufacturer and date of release.

1N4005GPEHE3/73 diodes are widely used and suitable for a range of medium-power applications. They have a voltage rating at peak reverse voltage from 50 to 1000 volts, and average rectified forward current from 1 to 5 amps. As a result, they are widely chosen for applications such as power supplies, rectifiers, battery chargers and phase control circuits.

In terms of operation principle, 1N4005GPEHE3/73 diodes are able to convert alternate current (AC) to direct current (DC). This is possible because of the diode’s semiconductor material, PN junction. It is a type of passive component designed to allow electricity to flow in one direction only. Inside the junction, electrons are exposed to a cross-potential field. This separates the majority carriers and creates potential barriers.

When a positive current is applied on the positive side (anode) of a PN junction, the current passes but quickly decreases in strength as it moves towards the negative side (cathode). At the same time, when a negative potential or potential barrier is applied to the negative side, the current remains blocked from crossing the junction. This is usable in AC current conversion, because it effectively cuts off the negative half of the waveform to provide us the DC.

Moreover, 1N4005GPEHE3/73 diodes are able to provide a further efficiency improvement in electronic devices. This is possible due to the diode’s low forward voltage drop, which is a characteristic of the PN junction that enables it to blend in with some forms of electrical circuit designs. Forward voltage drops is a basic characteristic of diodes, and here it decreases the total input voltage at a given supply current. This helps to increase the circuit’s efficiency, whereas low forward voltage drops reduce resistive heating and heat losses.

In conclusion, 1N4005GPEHE3/73 diodes are well-suited for a range of medium-power conversions in general applications. They offer greater corrosion resistance than regular components, along with an average rectified forward current of between 1 to 5 amps. They enable the conversion of AC to DC by blocking current in one direction only, with the help of the PN junction’s potential barriers. Furthermore, they offer high efficiency through their low forward voltage drop.

The specific data is subject to PDF, and the above content is for reference

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