Allicdata Part #: | 1N4005GPHE3/54-ND |
Manufacturer Part#: |
1N4005GPHE3/54 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO204AL |
More Detail: | Diode Standard 600V 1A Through Hole DO-204AL (DO-4... |
DataSheet: | 1N4005GPHE3/54 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SUPERECTIFIER® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N4005 |
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Diodes play a critical role in the functioning of various electrical systems. Among them, Rectifiers are used to regulate the alternating current (AC) within the circuits. The 1N4005GPHE3/54 is one type of single rectifiers which is among the most important components for the DC power supply application.
Introduction
The 1N4005GPHE3/54 is a general purpose rectifier designed for use in medium power applications. This rectifier was designed to withstand peak reverse voltage of up to 50 volts. It is made up of a silicon wafer arranged in a PN junction which is surrounded by a plastic housing. The rectifier also has an integrated thermal cut-off feature for additional protection during use. This rectifier is available in both surface mount and thru-hole packages.
Application Field
The 1N4005GPHE3/54 is suitable for use in a wide range of low-power applications. It is commonly used in DC power supplies, switch mode power supplies, rectifiers, regulators, inverters and AC/DC converters. Additionally, it can be used in both AC-dc and DC-dc applications. It is also often used in SMPS and telecommunication lines.
Working Principle
The 1N4005GPHE3/54 rectifier works by allowing the current to flow through it during the forward bias period, but blocking the current during the negative cycle. This is done through a PN junction within the rectifier. The PN junction is created by a Silicon wafer that is arranged in a specific pattern. This junction is designed to prevent current from flowing through the reverse direction.
During the forward bias period, the anode electrode is more Positive than the cathode electrode, allowing electrons to flow from the cathode to anode. These electrons are then gathered by the anode and this causes a current to run through the circuit. During the reverse bias period, the junction is not crossed, meaning the electrons cannot be collected by the anode. This results in no current flow.
Conclusion
The 1N4005GPHE3/54 rectifier is an important component for many low power applications. Its simple PN junction and thermal cut-off feature make it a reliable device that can handle a high voltage of up to 50 volts. Its popularity is largely due to its ability to both regulate current flow and protect circuits against over-voltage. As such, the 1N4005GPHE3/54 rectifier is a must-have for any project involving low-power DC applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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