1N4006-N-0-2-BP Allicdata Electronics
Allicdata Part #:

1N4006-N-0-2-BPMS-ND

Manufacturer Part#:

1N4006-N-0-2-BP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE GEN PURP 800V 1A DO-41
More Detail: Diode Standard 800V 1A (DC) Through Hole DO-41
DataSheet: 1N4006-N-0-2-BP datasheet1N4006-N-0-2-BP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes, also known as an electrical shunt, are two-terminal semiconductor devices that can conduct electricity in one direction and block it from flowing backward. The unidirectional nature of diodes makes them useful for many applications, from rectification to voltage reference circuits. Of all the diodes available on the market, the 1N4006-N-0-2-BP is one of the most popular for its versatile applications and reliable performance. This article will discuss the application fields of the 1N4006-N-0-2-BP and its working principles.

The 1N4006-N-0-2-BP diode is a silicon-based high-voltage, high-speed rectifying diode, designed for the switching and rectification of AC signals. It has a Maximum Reverse Voltage rating of 1000 V, a Maximum Forward Voltage Drop of 1.0 V, and a Maximum Continuous Forward Current of 1.0 A. It is also temperature-resistant, with a storage temperature of -65° to +150°C and an operating temperature of -55° to +150°C.

The 1N4006-N-0-2-BP is typically used in applications that require a high degree of reliability and performance, such as for the protection of sensitive electronic equipment from voltage surges. It can also be used in power inverters and voltage rectifiers, in audio-video amplifiers, for switching and protection circuits, and for photovoltaic applications. Due to its high temperature-resistance, the 1N4006-N-0-2-BP can also be used in low-temperature applications.

The working principle of the 1N4006-N-0-2-BP is relatively simple. When a DC voltage is applied to the anode, the junction between the P-type and N-type semiconductors is activated. The P-type semiconductor then acts as a gate, allowing current to flow from the anode to the cathode, with the voltage drop across the diode being approximately 1V. When the voltage is decreased, the junction between the P-type and N-type semiconductors deactivates, blocking current from flowing from the anode to the cathode. As the current is blocked, the voltage drop across the diode drops to zero, reached "on-state" or "forward conduction."

The 1N4006-N-0-2-BP diode is an ideal choice for a wide array of applications that require high voltage and high-speed rectification. Its high temperature-resistance is also an added bonus, making it an excellent choice for low-temperature applications. It is easy to understand the working principle of this diode, as it simply acts as a gate to control the flow of current. Overall, the 1N4006-N-0-2-BP diode is an excellent choice for a variety of applications, from power inverters to voltage rectifiers.

The specific data is subject to PDF, and the above content is for reference

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