Allicdata Part #: | 1N4006GPE-M3/73-ND |
Manufacturer Part#: |
1N4006GPE-M3/73 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURPOSE DO-204AL |
More Detail: | Diode |
DataSheet: | 1N4006GPE-M3/73 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The 1N4006GPE-M3/73 is a type of single rectifier diode, which is commonly used in a variety of applications. This type of diode typically features high current and low forward voltage drop, which makes it useful for a variety of applications. This diode typically features a low temperature coefficient, a low reverse leakage current, and a low reverse recovery time.
The application field of the 1N4006GPE-M3/73 includes rectifying AC power, such as in power supplies and motor control circuits, as well as in high current rectification applications. Other uses include signal clipping, signal limiters, and linear regulators, as well as low power signal rectification. This diode can also be used in low voltage switching applications, in which it is commonly used as a logic level device.
The working principle of the 1N4006GPE-M3/73 is determined by its construction. This type of diode is made of a semiconductor material that has a low resistance to the forward direction, but is highly resistive to the reverse direction. As an AC signal is applied, the diode will allow current to flow in the forward direction, while preventing current from flowing in the reverse direction. This allows for rectification of the signal, without allowing the reverse signals to affect the circuit.
This type of diode typically features a low forward voltage drop, as it is designed to operate at a low voltage. This low voltage is achieved by using a low forward bias voltage, along with a large depletion layer. The depletion layer acts as a barrier between the P and N layers of the device, and the larger this layer is, the lower the voltage drop will be.
The 1N4006GPE-M3/73 is also designed with a low temperature coefficient that helps ensure consistent performance over a wide temperature range. This feature allows the device to be used in applications where the operating temperature can vary greatly. Finally, this diode typically features a low reverse recovery time, which helps to reduce power dissipation, as well as reduce internal losses due to reverse bias.
The specific data is subject to PDF, and the above content is for reference
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