Allicdata Part #: | 1N4007GL-T-ND |
Manufacturer Part#: |
1N4007GL-T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 1KV 1A DO41 |
More Detail: | Diode Standard 1000V 1A Through Hole DO-41 |
DataSheet: | 1N4007GL-T Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 175°C |
Base Part Number: | 1N4007 |
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Diodes, also known as pn-junctions, are used in electronic circuits as rectifiers. Single diodes typically consist of a single semiconductor crystal, typically with a thyristor or SCR (silicon-controlled rectifier) integrated circuit attached. The 1N4007GL-T is a single-diode rectifier which operates in the same way as other single diodes. It is a popular device for medium-speed circuits with low to medium forward-current requirements and high reverse-current capability.
The 1N4007GL-T has a cathode (positive electrode) and an anode (negative electrode). The anode is marked with a triangle, and the cathode is marked with a square symbol. The two contacts are connected by a semiconductor crystal. This semiconductor crystal is responsible for the rectifying action of the device, allowing electric current to flow in a single direction – from the anode to the cathode.
The forward current range of the 1N4007GL-T is between 0.2A to 1.2A. This means that this device can be used for medium speed applications with low to medium forward current requirements. The reverse leakage current is most likely negligible for applications with 0-25V reverse voltage.
In order to understand how the 1N4007GL-T works, it is important to understand the different types of pn-junctions. A pn-junction is a diode composed of two pieces of doped semi-conducting material. The first segment is known as the n-type, and is composed of semi-conducting material with negatively charged electrons (n-type), while the other segment is known as the p-type, and is composed of semi-conducting material with positively charged holes (p-type).
When these two types of semi-conducting material come into contact, their respective charges move in and out of the semiconductor, creating a space charge. This space charge creates a potential barrier across the junction. Current flows in one direction through the diode, and in the opposite direction voltage drops due to this potential barrier. This is the rectifying effect of the diode.
The 1N4007GL-T can be used in a variety of applications such as rectification and AC/DC conversion. It can be used as a switch in order to enable higher currents and to oscillate, meaning that AC signals can be used to control DC voltage. The device can also be connected with other diodes to provide protection from overvoltages.
In conclusion, the 1N4007GL-T is a single-diode rectifier with low to medium forward-current requirements and high reverse-current capability. It works by creating a potential barrier across the pn-junction, allowing current to flow in one direction only. The device can be used in a variety of applications such as rectification and AC/DC conversion.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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