1N4007GP-M3/54 Allicdata Electronics
Allicdata Part #:

1N4007GP-M3/54-ND

Manufacturer Part#:

1N4007GP-M3/54

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1KV 1A DO204AL
More Detail: Diode Standard 1000V 1A Through Hole DO-204AL (DO-...
DataSheet: 1N4007GP-M3/54 datasheet1N4007GP-M3/54 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Description

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The 1N4007GP-M3/54 is a member of the family of single rectifier diodes. It is designed to be used in a variety of applications and is an efficient tool for rectifying the alternating current (AC) to direct current (DC). Its main components are the cathode which is made of negative polarity and anode which is made of positive polarity. The diode is electrically polarized in the forward direction, allowing electrons to flow only in one direction.

This diode is used in many applications including power rectification, free wheeling diodes, voltage clamp applications and current limiting. It is also ideal for use in the output stages of switching regulators, motor and heater controls, gate drivers and low voltage protection circuits. These diodes are also used for automotive control, reverse battery protection and for protecting against over voltage.

The 1N4007GP-M3/54 is designed to work as a general purpose rectifier diode in many applications where only high-voltage deep reverse breakdown characteristics are required. The peak reverse voltage of this diode is up to 1000 volts (VRRM) and it has a forward current range of up to 54 amps (IF(AV)). This diode can also withstand temperatures up to +150℃. Due to its low leakage current properties and high forward voltage characteristics, the 1N4007GP-M3/54 is very helpful in protecting semiconductor elements against destruction caused by overvoltages.

The working principle of this diode involves allowing current to move through it as long as it is forward-biased. When forward-biased, the anode is provided with a positive voltage relative to the cathode and the diode becomes conductive. As current passes through the diode in this condition, the diode\'s internal resistance reduces, allowing for more current to pass through. However, when the diode is reverse-biased, the voltage required to allow current to pass through is much higher than with a forward-biased diode.

The 1N4007GP-M3/54 can help ensure efficient, reliable power supply to devices. It is suitable for a variety of applications and its low leakage properties make it an ideal choice for devices which require a steady, continuous power supply. The diode\'s high-voltage deep reverse breakdown characteristics make it very effective in protecting devices against overvoltages and its low forward voltage characteristics make it an excellent tool for rectifying the alternating current to direct current. The 1N4007GP-M3/54 is the perfect choice for professionals and hobbyists alike.

The specific data is subject to PDF, and the above content is for reference

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