1N4007GPE-M3/73 Allicdata Electronics
Allicdata Part #:

1N4007GPE-M3/73-ND

Manufacturer Part#:

1N4007GPE-M3/73

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 1KV 1A DO204AL
More Detail: Diode Standard 1000V 1A Through Hole DO-204AL (DO-...
DataSheet: 1N4007GPE-M3/73 datasheet1N4007GPE-M3/73 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Manufacturing semi-conductor diode components and rectifier bridges is one of the major applications of the electronic industry in today’s world. A single diode, or a single rectifier bridge, is usually sufficient for the purpose of utilizing electricity for most basic circuit use. The 1N4007GPE-M3/73 is one such type of single diode, which is popular for its reliable performance and a wide range of application field.

The 1N4007GPE-M3/73 can handle significant levels of power, making it an ideal choice for applications that require power conversion and/or AC-DC conversion. It has a higher reverse breakdown voltage than other diode models and is capable of handling up to 1 amp of current. It is also capable of functioning with higher frequencies than other single diodes, due to its low parasitic capacitance, making it an ideal choice for high-frequency switcher and power controllers. It also has relatively low internal resistance, which is beneficial to circuit performance.

The 1N4007GPE-M3/73 is usually manufactured using a multi-level dielectric process that ensures low noise levels and low capacitance. This ensures that the diode has a high surge current capability. It also has a relatively low power dissipation compared to other similar models. It can be used with a wide range of semiconductor components, including transistors, optoelectronics, and diode bridges.

This diode is particularly useful for a number of applications, including switch-mode power supplies, direct current motors, and half-bridge power converters. The 1N4007GPE-M3/73 can also be used in high-speed logic circuits and in low-noise signal conditioning circuits.

In terms of its working principle, the 1N4007GPE-M3/73 is a typical p-n junction diode. A typical diode is made up of two pieces of silicon, one of which is positively or negatively charged depending on the type of diode. When a voltage is applied to the two pieces, the two sides of the diode become separated and the electrons flow along the depletion region which separates them. The electrons which flow ultimately cause current to flow through the diode, which is the basis of its working principle.

The 1N4007GPE-M3/73 diode can be used in many types of applications, including rectification, voltage clamping, and polarity protection. It is also widely used in power supplies, circuit protection, and various types of switching circuits. Due to its high surge current capability, it can be used in a variety of applications such as switch-mode power supplies, direct current motors, and half-bridge power converters. Additionally, it has very low levels of power dissipation, making it suitable for use in a variety of applications which require high efficiency and power efficiency.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "1N40" Included word is 32
Part Number Manufacturer Price Quantity Description
1N4003G ON Semicondu... -- 30826 DIODE GEN PURP 200V 1A DO...
1N4002G ON Semicondu... -- 17034 DIODE GEN PURP 100V 1A DO...
1N4005G ON Semicondu... -- 20855 DIODE GEN PURP 600V 1A DO...
1N4004G ON Semicondu... -- 1000 DIODE GEN PURP 400V 1A DO...
1N4005G A0G Taiwan Semic... 0.04 $ 21000 DIODE GEN PURP 600V 1A DO...
1N4003E-E3/73 Vishay Semic... 0.04 $ 18000 DIODE GEN PURP 200V 1A DO...
1N4007E-E3/53 Vishay Semic... 0.06 $ 15000 DIODE GEN PURP 1KV 1A DO2...
1N4007TA SMC Diode So... 0.02 $ 5000 DIODE GEN PURP 1KV 1A DO4...
1N4007GP-TP Micro Commer... -- 1000 DIODE GEN PURP 1KV 1A DO4...
1N4003-B Diodes Incor... 0.15 $ 2060 DIODE GEN PURP 200V 1A DO...
1N4007B-G Comchip Tech... 0.13 $ 715 DIODE GEN PURP 1KV 1A DO4...
1N4007T-G Comchip Tech... 0.01 $ 5000 DIODE GEN PURP 1KV 1A DO4...
1N4001-E3/73 Vishay Semic... -- 1000 DIODE GEN PURP 50V 1A DO2...
1N4001G-T Diodes Incor... 0.04 $ 1000 DIODE GEN PURP 50V 1A DO4...
1N4001GP-E3/54 Vishay Semic... 0.06 $ 5500 DIODE GEN PURP 50V 1A DO2...
1N4007FFG ON Semicondu... 0.02 $ 3000 DIODE GEN PURP 1KV 1A DO4...
1N4007-G Comchip Tech... 0.01 $ 190000 DIODE GEN PURP 1KV 1A DO4...
1N4001-TP Micro Commer... -- 90000 DIODE GEN PURP 50V 1A DO4...
1N4005-TP Micro Commer... 0.01 $ 80000 DIODE GEN PURP 600V 1A DO...
1N4001-G Comchip Tech... 0.01 $ 110000 DIODE GEN PURP 50V 1A DO4...
1N4002-TP Micro Commer... 0.01 $ 25000 DIODE GEN PURP 100V 1A DO...
1N4001-T Diodes Incor... -- 125000 DIODE GEN PURP 50V 1A DO4...
1N4003-T Diodes Incor... 0.02 $ 1000 DIODE GEN PURP 200V 1A DO...
1N4002-T Diodes Incor... 0.02 $ 35000 DIODE GEN PURP 100V 1A DO...
1N4004RLG ON Semicondu... -- 130000 DIODE GEN PURP 400V 1A DO...
1N4002RLG ON Semicondu... -- 50000 DIODE GEN PURP 100V 1A DO...
1N4003RLG ON Semicondu... -- 1000 DIODE GEN PURP 200V 1A DO...
1N4006RLG ON Semicondu... 0.02 $ 5000 DIODE GEN PURP 800V 1A AX...
1N4005RLG ON Semicondu... -- 10000 DIODE GEN PURP 600V 1A DO...
1N4007GTA SMC Diode So... 0.02 $ 10000 DIODE GEN PURP 1KV 1A DO4...
1N4004-G Comchip Tech... 0.02 $ 45000 DIODE GEN PURP 400V 1A DO...
1N4007-E3/54 Vishay Semic... -- 55000 DIODE GEN PURP 1KV 1A DO2...
Latest Products
IDW30E65D1

Diodes - General Purpose, Power, Switchi...

IDW30E65D1 Allicdata Electronics
PMEG4005AEA/M5X

DIODE SCHOTTKY 40V 500MA SC76Diode Schot...

PMEG4005AEA/M5X Allicdata Electronics
RGP10J-057M3/54

DIODE GEN PURPOSE DO-204ALDiode

RGP10J-057M3/54 Allicdata Electronics
1N4004-N-2-2-BP

DIODE GEN PURP 400V 1A DO41Diode Standar...

1N4004-N-2-2-BP Allicdata Electronics
CPD76X-1N5817-CT

DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...

CPD76X-1N5817-CT Allicdata Electronics
JANTXV1N6662US

DIODE GEN PURP 400V 500MA D5ADiode Stand...

JANTXV1N6662US Allicdata Electronics