Allicdata Part #: | 1N4007GPPTR-ND |
Manufacturer Part#: |
1N4007GPP TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | DIODE GEN PURP 1KV 1A DO41 |
More Detail: | Diode Standard 1000V 1A Through Hole DO-41 |
DataSheet: | 1N4007GPP TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 5µA @ 1000V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-41 |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Rectifiers are electronic components used to convert alternating current (AC) to direct current (DC). The 1N4007GPP TR is a single rectifier diode with a maximum repetitive peak reverse voltage rating of 1000 Volts (1KV). It is designed for use in general purpose applications, such as in power supplies, transformers and in motor drives for speed control.
The 1N4007GPP TR features a glass passivated junction, high surge current capability, an operating temperature range of -65°C to 150°C, and excellent resistance to power reverse surges. It also features a low forward voltage drop across the rectifier and a low reverse leakage current. The package is offered in both through-hole and surface mount configurations to meet different user needs.
The 1N4007GPP TR utilizes a simple design, which helps ensure its ruggedness and high reliability. It comprises of a single PN junction, housed in a ceramic case, which works by passing electrons in one direction, while blocking them in the other. This is essentially what creates the direct current output that is utilized in a variety of consumer applications today.
The working principle of a 1N4007GPP TR is simple. When an AC voltage is applied to the anode and the cathode, it causes a forward bias on the PN junction, and electrons from the anode travel through the diode to the cathode. If the forward bias exceeds the junction breakdown voltage (which is typically around 2-4 Volts for a 1N4007GPP TR), the diode will turn off and the PN junction will become blocked, not allowing any current to flow.
This causes the rectified AC voltage at the diode’s output to become zero until the forward bias reaches the junction breakdown voltage again. Then, when the forward bias falls below the breakdown voltage, a negative voltage spike appears at the diode’s output, and the AC voltage starts oscillating again. This process is repeated until the input AC voltage reaches the zero voltage levels and there is no more current passing through the diode.
The 1N4007GPP TR offers several advantages. It has a low forward voltage drop and fast recovery time, which increases its efficiency and reduces power losses. Its package is available in through-hole and surface mount configurations, so it can easily be mounted on PCBs. Its low reverse leakage current also helps to reduce power consumption. Its temperature range and surge current capability provide additional design flexibility.
The 1N4007GPP TR is an ideal solution for applications such as power supplies, transformers, and motor drives for speed control. Its cost and reliability make it ideal for both commercial and residential applications. Its wide operating temperature range, maximum repetitive peak reverse voltage rating, low forward voltage drop, and low reverse leakage current make this diode an attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N4003G | ON Semicondu... | -- | 30826 | DIODE GEN PURP 200V 1A DO... |
1N4002G | ON Semicondu... | -- | 17034 | DIODE GEN PURP 100V 1A DO... |
1N4005G | ON Semicondu... | -- | 20855 | DIODE GEN PURP 600V 1A DO... |
1N4004G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 1A DO... |
1N4005G A0G | Taiwan Semic... | 0.04 $ | 21000 | DIODE GEN PURP 600V 1A DO... |
1N4003E-E3/73 | Vishay Semic... | 0.04 $ | 18000 | DIODE GEN PURP 200V 1A DO... |
1N4007E-E3/53 | Vishay Semic... | 0.06 $ | 15000 | DIODE GEN PURP 1KV 1A DO2... |
1N4007TA | SMC Diode So... | 0.02 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007GP-TP | Micro Commer... | -- | 1000 | DIODE GEN PURP 1KV 1A DO4... |
1N4003-B | Diodes Incor... | 0.15 $ | 2060 | DIODE GEN PURP 200V 1A DO... |
1N4007B-G | Comchip Tech... | 0.13 $ | 715 | DIODE GEN PURP 1KV 1A DO4... |
1N4007T-G | Comchip Tech... | 0.01 $ | 5000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-E3/73 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 50V 1A DO2... |
1N4001G-T | Diodes Incor... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A DO4... |
1N4001GP-E3/54 | Vishay Semic... | 0.06 $ | 5500 | DIODE GEN PURP 50V 1A DO2... |
1N4007FFG | ON Semicondu... | 0.02 $ | 3000 | DIODE GEN PURP 1KV 1A DO4... |
1N4007-G | Comchip Tech... | 0.01 $ | 190000 | DIODE GEN PURP 1KV 1A DO4... |
1N4001-TP | Micro Commer... | -- | 90000 | DIODE GEN PURP 50V 1A DO4... |
1N4005-TP | Micro Commer... | 0.01 $ | 80000 | DIODE GEN PURP 600V 1A DO... |
1N4001-G | Comchip Tech... | 0.01 $ | 110000 | DIODE GEN PURP 50V 1A DO4... |
1N4002-TP | Micro Commer... | 0.01 $ | 25000 | DIODE GEN PURP 100V 1A DO... |
1N4001-T | Diodes Incor... | -- | 125000 | DIODE GEN PURP 50V 1A DO4... |
1N4003-T | Diodes Incor... | 0.02 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4002-T | Diodes Incor... | 0.02 $ | 35000 | DIODE GEN PURP 100V 1A DO... |
1N4004RLG | ON Semicondu... | -- | 130000 | DIODE GEN PURP 400V 1A DO... |
1N4002RLG | ON Semicondu... | -- | 50000 | DIODE GEN PURP 100V 1A DO... |
1N4003RLG | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
1N4006RLG | ON Semicondu... | 0.02 $ | 5000 | DIODE GEN PURP 800V 1A AX... |
1N4005RLG | ON Semicondu... | -- | 10000 | DIODE GEN PURP 600V 1A DO... |
1N4007GTA | SMC Diode So... | 0.02 $ | 10000 | DIODE GEN PURP 1KV 1A DO4... |
1N4004-G | Comchip Tech... | 0.02 $ | 45000 | DIODE GEN PURP 400V 1A DO... |
1N4007-E3/54 | Vishay Semic... | -- | 55000 | DIODE GEN PURP 1KV 1A DO2... |
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