1N4459R Allicdata Electronics
Allicdata Part #:

1086-17638-ND

Manufacturer Part#:

1N4459R

Price: $ 12.47
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE GEN PURP 1KV 15A DO203AA
More Detail: Diode Standard, Reverse Polarity 1000V 15A Chassis...
DataSheet: 1N4459R datasheet1N4459R Datasheet/PDF
Quantity: 1000
100 +: $ 11.22320
Stock 1000Can Ship Immediately
$ 12.47
Specifications
Series: Military, MIL-PRF-19500/162
Packaging: Bulk 
Part Status: Active
Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: --
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Description

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Diodes - Rectifiers - Single

A 1N4459R is a silicon rectifier diode, which uses a p–n junction, to convert AC voltage into DC voltage. It is one of the most popular rectifier diodes in the market and is commonly used in various applications.

Application Field of 1N4459R

1N4459R diodes are typically used in rectifying circuits, primarily in low voltage applications such as signal level power supplies. These diodes can be used to rectify a wide range of AC signals, from frequencies of 300Hz up to above 100 KHz. Additionally, the 1N4459R is capable of handling reverse voltages of up to 20V, making these diodes suitable for applications such as automotive electronics, power supplies, and solar panel applications. Furthermore, these diodes can also be used in the protection of electronic components against overvoltage.

Working Principle of 1N4459R

The working principle of 1N4459R follows the conventional p–n junction rectifier model. The p–n junction is formed by doping a semiconductor material with trivalent impurities and doping another section with pentavalent impurities. This creates two distinct layers; the n-type layer, which is composed of electrons, and the p-type layer, which is composed of holes. As AC voltage is applied across the diode, the electrons and holes cross the junction and form a rectified DC voltage. The diode can also be reverse biased, in which case the rectified current flow is blocked and no voltage is generated.

The main advantage of using a 1N4459R rectifier diode is its efficiency. The diode has a low voltage drop, which means that less power is dissipated during the conversion of AC voltage to DC voltage. This makes the device suitable for applications requiring high efficiency, such as solar power systems.

Additionally, 1N4459R diodes are designed to be highly reliable and robust. These diodes are capable of withstand high temperature operating conditions and have a low junction capacitance, allowing for faster switching times. Furthermore, these diodes are manufactured using a glass-passivated junction technology, which makes them resistant to thermal shock and vibration.

Conclusion

1N4459R rectifier diodes are widely used in many applications, such as low voltage power supplies, solar power systems, and protection against overvoltage. These diodes are highly efficient and reliable, and can operate in high temperature environments. They are also relatively low cost, making them an attractive option for cost-sensitive applications. As such, 1N4459R rectifier diodes are often a go-to choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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