Allicdata Part #: | 1N5614-ND |
Manufacturer Part#: |
1N5614 |
Price: | $ 4.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 200V 1A AXIAL |
More Detail: | Diode Standard 200V 1A Through Hole |
DataSheet: | 1N5614 Datasheet/PDF |
Quantity: | 349 |
1 +: | $ 4.17060 |
10 +: | $ 3.72078 |
100 +: | $ 3.05115 |
500 +: | $ 2.47071 |
1000 +: | $ 2.08372 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2µs |
Current - Reverse Leakage @ Vr: | 500nA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | A, Axial |
Operating Temperature - Junction: | -65°C ~ 200°C |
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A 1N5614 diode, also referred as an ultrafast recovery rectifier, belongs to the family of single diodes and rectifiers. It is a subcategory of its plethora of rectifier technology available in the market today; 1N5614 finds application in the electronic products such as TVs and DVDs.
The 1N5614 is generally a high-speed, low-leakage rectifier device constructed from a combination of two PN junction diodes and two NPN bipolar junction transistors. This device has been designed and implemented with the properties of a constant reverse recovery time. The main physical attribute of the 1N5614 rectifier diode is its small 2x2mm form factor which makes it ideal for use in a wide range of small electronics applications.
The working principle of 1N5614 diode is based on the rectifier effect. When the device is subjected to an alternating current (AC) voltage source, it acts as a rectifier device and allows the current to flow in one direction only. This results in a current pulse that is suitable for further processing. Some of the features associated with the 1N5614 device include fast reverse recovery time, low leakage current, low forward voltage drop, and low on-resistance.
Due to its fast operating speed and ability to dissipate large amounts of current, 1N5614 can be used in many electronic applications. It is commonly used for the production of electronic switching devices and displays. Additionally, 1N5614 can be employed in critical safety applications such as circuit protection and motion control, due to its high speed switching transition and minimal voltage drop. Moreover, 1N5614 diodes are also used in power supplies, as they possess lower on-resistance than most standard rectifier diodes and are able to operate at high temperature.
In addition to its extensively used applications in several industries, 1N5614 has also been utilized in many consumer electronics products such as TVs and DVD players. The device can help provide efficient demodulation of video signals, thereby enabling high-definition video images. Furthermore, its small package size allows it to be fitted into miniaturized systems, thereby reducing the cost and size of the end products. It is often used in combination with other components such as drivers, switches, and transistors.
The 1N5614 is widely used as an efficient, accurate and economical device in many electronic systems. It provides the power necessary for the operation of electronic systems, and its fast switching speed ensures a high degree of accuracy and reliability. Additionally, its minimal forward voltage drop reduces the amount of power consumed, and its low profile package makes it suitable for use in small, portable devices.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5648 | Littelfuse I... | 0.0 $ | 1000 | TVS DIODE 34.8V 61.9V DO1... |
1N5655A | Microsemi Co... | 15.37 $ | 2 | TVS DIODE 70.1V 113V DO13 |
1N5636A | Microsemi Co... | 15.61 $ | 48 | TVS DIODE 11.1V 18.2V DO1... |
1N5613 | Microsemi Co... | 45.0 $ | 1000 | TVS DIODE C-BODY |
1N5610 | Microsemi Co... | 45.37 $ | 1 | TVS DIODE 30.5V 47.6V G A... |
1N5625-TAP | Vishay Semic... | 0.26 $ | 10000 | DIODE AVALANCHE 400V 3A S... |
1N5627-TAP | Vishay Semic... | 0.27 $ | 10000 | DIODE AVALANCHE 800V 3A S... |
1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5614 | Microsemi Co... | 4.59 $ | 349 | DIODE GEN PURP 200V 1A AX... |
1N5618 | Microsemi Co... | 4.59 $ | 299 | DIODE GEN PURP 600V 1A AX... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
1N5618US | Microsemi Co... | 5.95 $ | 481 | DIODE GEN PURP 600V 1A D5... |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5617US | Microsemi Co... | 6.95 $ | 458 | DIODE GEN PURP 400V 1A D5... |
1N5619US | Microsemi Co... | 7.77 $ | 163 | DIODE GEN PURP 600V 1A D5... |
1N5624-TR | Vishay Semic... | 0.25 $ | 7500 | DIODE AVALANCHE 200V 3A S... |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616 | Microsemi Co... | 4.59 $ | 270 | DIODE GEN PURP 400V 1A AX... |
1N5617GP-E3/54 | Vishay Semic... | 0.08 $ | 4000 | DIODE GEN PURP 400V 1A DO... |
1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5626-TR | Vishay Semic... | -- | 5000 | DIODE AVALANCHE 600V 3A S... |
1N5627-TR | Vishay Semic... | 0.27 $ | 1000 | DIODE AVALANCHE 800V 3A S... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5616US | Microsemi Co... | 5.95 $ | 191 | DIODE GEN PURP 400V 1A D5... |
1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5617C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 400V 2A AX... |
1N5622C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5615 | Microsemi Co... | -- | 82 | DIODE GEN PURP 200V 1A AX... |
1N5624-TAP | Vishay Semic... | 0.22 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5626-TAP | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 600V 3A S... |
1N5625-TR | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
1N5614US | Microsemi Co... | 6.01 $ | 122 | DIODE GEN PURP 200V 1A D5... |
1N5656A | Microsemi Co... | -- | 26 | TVS DIODE 77.8V 125V DO13 |
1N5647A | Microsemi Co... | 15.37 $ | 450 | TVS DIODE 33.3V 53.9V DO1... |
1N5617E3 | Microsemi Co... | 3.49 $ | 1000 | RECTIFIERDiode Standard 4... |
1N5622 | Semtech Corp... | -- | 1000 | DIODE GEN PURP 1KV 2A AXI... |
1N5622US | Microsemi Co... | 4.45 $ | 1000 | DIODE GEN PURP 1KV 1A D5A... |
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