| Allicdata Part #: | 1N5622US-ND |
| Manufacturer Part#: |
1N5622US |
| Price: | $ 4.45 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | DIODE GEN PURP 1KV 1A D5A |
| More Detail: | Diode Standard 1000V 1A Surface Mount D-5A |
| DataSheet: | 1N5622US Datasheet/PDF |
| Quantity: | 1000 |
| 153 +: | $ 4.00173 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 1000V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 3A |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 2µs |
| Current - Reverse Leakage @ Vr: | 500nA @ 1000V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | SQ-MELF, A |
| Supplier Device Package: | D-5A |
| Operating Temperature - Junction: | -65°C ~ 200°C |
Description
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Diodes - Rectifiers - Single
The 1N5622US is a single-diode rectifier that is used for many applications, ranging from power converters for various devices to rectifiers for household electronics. It has several important characteristics that have made it popular for a wide range of applications.The 1N5622US is a general purpose rectifier made from high quality silicon wafers. It has a maximum operating temperature of 125⁰C, low breakdown voltage at +125V, and low reverse leakage current. It also has a low forward voltage drop of 600mV at 1A and a maximum repetition rate of 50 Hz.The 1N5622US is a high speed rectifier that is designed to be used in high temperature applications. It can operate up to a frequency of 50kHz with a rise and fall time of 1μs. It is designed with both axial and surface-mount configurations and has an ESD resistance of up to 4kV which makes it a suitable choice for consumer electronic designs.The working principle of the 1N5622US rectifier is based on the physical property of semiconductor PN junction diodes. A PN junction diode is created when two pieces of semiconductor material with opposite polarities are joined together. When voltage is applied across the diode, the electric field generated at the PN junction will create an avalanche breakdown. This breakdown causes current flow from the anode to the cathode.In the case of the 1N5622US, the reverse breakdown voltage is set to +125V, which means that it does not conduct until the voltage applied to its anode and cathode exceeds +125V. This also means that the 1N5622US can be used as a switch to cut off power supply in the event of an overvoltage.The 1N5622US rectifier is used in power supplies, motor control, solar converters and other applications where high reliability and low noise are requirements. Its main application areas include renewable energy systems, automotive systems, medical electronics, and industrial automation. Additionally, its low forward voltage drop of 600mV at 1A makes it an ideal choice for circuits with low power supplies.The 1N5622US rectifier has an excellent reputation among engineers and is highly sought after for high power and voltage applications. Its features make it a great choice for any application where accurate, reliable, and low-noise rectification is a requirement. In conclusion, the 1N5622US rectifier is a great addition to any device’s power system and can be used for a variety of different applications.The specific data is subject to PDF, and the above content is for reference
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1N5622US Datasheet/PDF