Allicdata Part #: | 1N5610-ND |
Manufacturer Part#: |
1N5610 |
Price: | $ 45.37 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 30.5V 47.6V G AXIAL |
More Detail: | N/A |
DataSheet: | 1N5610 Datasheet/PDF |
Quantity: | 1 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | $ 41.24610 |
Voltage - Clamping (Max) @ Ipp: | 47.6V |
Supplier Device Package: | G, Axial |
Package / Case: | G, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 32A |
Series: | -- |
Voltage - Breakdown (Min): | 33V |
Voltage - Reverse Standoff (Typ): | 30.5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS - Diodes
The 1N5610 is a transient voltage suppression (TVS) diode formed by diffused junction and designed to protect signaling and data lines from overvoltage damage.
TVS diodes have a variety of applications, to name a few: surge suppression in AC and DC power electronics, lightning and other overvoltage protection, electrostatic discharge protection, circuit board protection, induction coils, transformers and telecom networks.
The 1N5610 is particularly suitable for applications that require high withstand surge current capability, low leakage current and low capacitance. This diode is available in the SOT23 and SOT323 packages.
The 1N5610 has a Cathode and Anode first and an Anode and Cathode second. When comparing it to conventional Zeners, it has a better clamping characteristic during high transient voltage and it has a higher peak working voltage rating.
The working principle of 1N5610 can be summarised as follows: when the voltage across the input pins is lower than the clamping voltage, the diode is in a reverse-bias mode and behaves like an open circuit. If the voltage across the input pins increases beyond the clamping voltage, the diode starts to conduct and clamps the voltage at the zener voltage, thereby limiting the voltage that appears across the load.
This diode has a wide variety of applications, including:
- AC power supply line protection
- Surge protection circuits
- Telecom equipment
- Computer and peripherals equipment
- Induction coils
- Data and signaling lines
- Lightning protection circuits
- High-speed signal line transceivers
- Transformers
- High-speed switching and correction circuits
- Automotive and aircraft electronics.
The 1N5610 has a variety of features, such as: low capacitance, very low leakage current, high voltage rating, wide operating temperature range and low power dissipation. The 1N5610 also has a small footprint, which makes it ideal for tight spaces.
When it comes to installation, the 1N5610 is very easy to install. It can be soldered directly to the printed circuit boards without the need for any additional hardware. The 1N5610 can also be used in a wide variety of operating conditions, from -55°C to 150°C.
The 1N5610 is a low cost, highly reliable device designed to protect circuits from voltage transients. It is suitable for a wide variety of applications, including those mentioned above. It is also an excellent choice for applications that have tight space constraints, as it has a small footprint and is very easy to install.
To conclude, 1N5610 has many advantages, including low cost, low leakage current and wide operating temperature range. Its features, combined with its ability to withstand high surges, make it the perfect solution for equipment protection.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
1N5611 | Microsemi Co... | 38.79 $ | 1000 | TVS DIODE |
1N5648 | Littelfuse I... | 0.0 $ | 1000 | TVS DIODE 34.8V 61.9V DO1... |
1N5655A | Microsemi Co... | 15.37 $ | 2 | TVS DIODE 70.1V 113V DO13 |
1N5636A | Microsemi Co... | 15.61 $ | 48 | TVS DIODE 11.1V 18.2V DO1... |
1N5613 | Microsemi Co... | 45.0 $ | 1000 | TVS DIODE C-BODY |
1N5610 | Microsemi Co... | 45.37 $ | 1 | TVS DIODE 30.5V 47.6V G A... |
1N5625-TAP | Vishay Semic... | 0.26 $ | 10000 | DIODE AVALANCHE 400V 3A S... |
1N5627-TAP | Vishay Semic... | 0.27 $ | 10000 | DIODE AVALANCHE 800V 3A S... |
1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
1N5616C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 400V 1A AX... |
1N5614 | Microsemi Co... | 4.59 $ | 349 | DIODE GEN PURP 200V 1A AX... |
1N5618 | Microsemi Co... | 4.59 $ | 299 | DIODE GEN PURP 600V 1A AX... |
1N5617 | Microsemi Co... | -- | 181 | DIODE GEN PURP 400V 1A AX... |
1N5618US | Microsemi Co... | 5.95 $ | 481 | DIODE GEN PURP 600V 1A D5... |
1N5615US | Microsemi Co... | 6.31 $ | 430 | DIODE GEN PURP 200V 1A D5... |
1N5617US | Microsemi Co... | 6.95 $ | 458 | DIODE GEN PURP 400V 1A D5... |
1N5619US | Microsemi Co... | 7.77 $ | 163 | DIODE GEN PURP 600V 1A D5... |
1N5624-TR | Vishay Semic... | 0.25 $ | 7500 | DIODE AVALANCHE 200V 3A S... |
1N5620 | Microsemi Co... | 4.73 $ | 161 | DIODE GEN PURP 800V 1A AX... |
1N5616 | Microsemi Co... | 4.59 $ | 270 | DIODE GEN PURP 400V 1A AX... |
1N5617GP-E3/54 | Vishay Semic... | 0.08 $ | 4000 | DIODE GEN PURP 400V 1A DO... |
1N5619GP-E3/54 | Vishay Semic... | 0.08 $ | 8000 | DIODE GEN PURP 600V 1A DO... |
1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
1N5626-TR | Vishay Semic... | -- | 5000 | DIODE AVALANCHE 600V 3A S... |
1N5627-TR | Vishay Semic... | 0.27 $ | 1000 | DIODE AVALANCHE 800V 3A S... |
1N5619 | Microsemi Co... | -- | 177 | DIODE GEN PURP 600V 1A AX... |
1N5616US | Microsemi Co... | 5.95 $ | 191 | DIODE GEN PURP 400V 1A D5... |
1N5615GP-E3/54 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
1N5617C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 400V 2A AX... |
1N5622C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
1N5615 | Microsemi Co... | -- | 82 | DIODE GEN PURP 200V 1A AX... |
1N5624-TAP | Vishay Semic... | 0.22 $ | 1000 | DIODE AVALANCHE 200V 3A S... |
1N5626-TAP | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 600V 3A S... |
1N5625-TR | Vishay Semic... | 0.26 $ | 1000 | DIODE AVALANCHE 400V 3A S... |
1N5614US | Microsemi Co... | 6.01 $ | 122 | DIODE GEN PURP 200V 1A D5... |
1N5656A | Microsemi Co... | -- | 26 | TVS DIODE 77.8V 125V DO13 |
1N5647A | Microsemi Co... | 15.37 $ | 450 | TVS DIODE 33.3V 53.9V DO1... |
1N5617E3 | Microsemi Co... | 3.49 $ | 1000 | RECTIFIERDiode Standard 4... |
1N5622 | Semtech Corp... | -- | 1000 | DIODE GEN PURP 1KV 2A AXI... |
1N5622US | Microsemi Co... | 4.45 $ | 1000 | DIODE GEN PURP 1KV 1A D5A... |
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