| Allicdata Part #: | 1N5655AMS-ND |
| Manufacturer Part#: |
1N5655A |
| Price: | $ 15.37 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 70.1V 113V DO13 |
| More Detail: | N/A |
| DataSheet: | 1N5655A Datasheet/PDF |
| Quantity: | 2 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 1 +: | $ 13.97340 |
| Voltage - Clamping (Max) @ Ipp: | 113V |
| Supplier Device Package: | DO-13 |
| Package / Case: | DO-13 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 1500W (1.5kW) |
| Current - Peak Pulse (10/1000µs): | 13.3A |
| Series: | -- |
| Voltage - Breakdown (Min): | 77.9V |
| Voltage - Reverse Standoff (Typ): | 70.1V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes
The 1N5655A is a unidirectional surface mount Technology (SMT) transient-voltage-suppressor (TVS) diode that helps protect against electrostatic discharges (ESDs) and lightning strikes. The device is in the SOD-323 package which is smaller and leadless than the standard SOD-123 package and designed for lower mount profile and smaller board layout. This device can withstand transient current up to the rated peak pulse current of 5A.
Application Field
The 1N5655A has a wide application field throughout the world, including in medical equipment, automotive, LED display, cellular phones, computers, and other consumer markets. This TVS diode is suited for ESD protection for data and USB port, serial port, audio ports, VCC lines and control lines. This TVS diode is capable of clamping the ESD peaks up to two-kV (air-gap-discharge) and one-kV (contact-discharge) when placed in its SO-323 package.
Working Principle
This TVS diode is fabricated with an extremely thin layer of highly doped silicon. The semiconductor material used in these devices is designed so that it is highly conductive when a certain voltage is applied. When a voltage higher than the specified peak working voltage of 5V is applied, the device is able to withstand the voltage and breakdown. When the voltage exceeds the peak working voltage, the high voltage will cause the current to flow through the device and the energy is dissipated in the TVS diode as a result of the voltage-current characteristics.
The TVS diode is able to withstand transient current up to the rated peak pulse current of 5A. When the current reaches 5A, the device becomes highly conductive and the current flows through the device until the voltage is less than the peak working voltage, at which point the device becomes non-conductive again. This process allows the device to protect the equipment from damage due to the high current surge.
The 1N5655A is a unidirectional device, which means that it only allows current to flow in one direction. This means that the TVS diode is effective at protecting against ESD and lightning strikes, and it can also be used to protect against reverse bias conditions. The device is designed to help protect against electrostatic discharges and reverse bias events by clamping the voltage at the peak working voltage of 5V.
Given its wide application field, the 1N5655A is a highly useful component for a variety of applications. It is a cost-effective way to protect against high voltage and transient current and can help to maintain the integrity of critical systems. The device is offered in the small SOD-323 packaging which makes it easy to integrate into PCB designs for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| 1N5663A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 145V 234V DO13 |
| 1N5623GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 1KV 1A DO2... |
| 1N5665A | Microsemi Co... | 15.37 $ | 34 | TVS DIODE 171V 274V DO13 |
| 1N5618GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| 1N5643A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 23.1V 37.5V DO1... |
| 1N5643 | Microsemi Co... | -- | 1000 | TVS DIODE |
| 1N5661 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5654A | Microsemi Co... | -- | 1000 | TVS DIODE 64.1V 103V DO13 |
| 1N5620C.TR | Semtech Corp... | 2.42 $ | 500 | DIODE GEN PURP 800V 1A AX... |
| 1N5651A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 47.8V 77V DO13 |
| 1N5656 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5665 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5654 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5618US | Microsemi Co... | 5.95 $ | 481 | DIODE GEN PURP 600V 1A D5... |
| 1N5625GP-E3/73 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURPOSE DO204AC... |
| 1N5642A | Microsemi Co... | -- | 26 | TVS DIODE 20.5V 33.2V DO1... |
| 1N5658A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 94V 152V DO13 |
| 1N5624-TR | Vishay Semic... | 0.25 $ | 7500 | DIODE AVALANCHE 200V 3A S... |
| 1N5622C.TR | Semtech Corp... | 2.42 $ | 1000 | DIODE GEN PURP 1KV 1A AXI... |
| 1N5614 | Microsemi Co... | 4.59 $ | 349 | DIODE GEN PURP 200V 1A AX... |
| 1N5655A | Microsemi Co... | 15.37 $ | 2 | TVS DIODE 70.1V 113V DO13 |
| 1N5626-TR | Vishay Semic... | -- | 5000 | DIODE AVALANCHE 600V 3A S... |
| 1N5617GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N5657 | Microsemi Co... | -- | 1000 | TVS DIODE 81V 144V DO13 |
| 1N5617GP-E3/54 | Vishay Semic... | 0.08 $ | 4000 | DIODE GEN PURP 400V 1A DO... |
| 1N5614GP-E3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| 1N5614US | Microsemi Co... | 6.01 $ | 122 | DIODE GEN PURP 200V 1A D5... |
| 1N5617GP-E3/73 | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 400V 1A DO... |
| 1N5632A | Microsemi Co... | 11.88 $ | 25 | TVS DIODE 7.78V 13.4V DO1... |
| 1N5642 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5648A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 36.8V 59.3V DO1... |
| 1N5649A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 40.2V 64.8V DO1... |
| 1N5659A | Microsemi Co... | -- | 131 | TVS DIODE 102V 165V DO13 |
| 1N5636A | Microsemi Co... | 15.61 $ | 48 | TVS DIODE 11.1V 18.2V DO1... |
| 1N5627-TAP | Vishay Semic... | 0.27 $ | 10000 | DIODE AVALANCHE 800V 3A S... |
| 1N5631A | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE 7.02V 12.1V DO1... |
| 1N5637 | Microsemi Co... | 11.88 $ | 1000 | TVS DIODE |
| 1N5623GP-E3/54 | Vishay Semic... | 0.08 $ | 0 | DIODE GEN PURP 1KV 1A DO2... |
| 1N5664A | Microsemi Co... | 11.88 $ | 35 | TVS DIODE 154V 246V DO13 |
| 1N5624GPHE3/54 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
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1N5655A Datasheet/PDF