1N5655A Allicdata Electronics
Allicdata Part #:

1N5655AMS-ND

Manufacturer Part#:

1N5655A

Price: $ 15.37
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 70.1V 113V DO13
More Detail: N/A
DataSheet: 1N5655A datasheet1N5655A Datasheet/PDF
Quantity: 2
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
1 +: $ 13.97340
Stock 2Can Ship Immediately
$ 15.37
Specifications
Voltage - Clamping (Max) @ Ipp: 113V
Supplier Device Package: DO-13
Package / Case: DO-13
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 13.3A
Series: --
Voltage - Breakdown (Min): 77.9V
Voltage - Reverse Standoff (Typ): 70.1V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

The 1N5655A is a unidirectional surface mount Technology (SMT) transient-voltage-suppressor (TVS) diode that helps protect against electrostatic discharges (ESDs) and lightning strikes. The device is in the SOD-323 package which is smaller and leadless than the standard SOD-123 package and designed for lower mount profile and smaller board layout. This device can withstand transient current up to the rated peak pulse current of 5A.

Application Field

The 1N5655A has a wide application field throughout the world, including in medical equipment, automotive, LED display, cellular phones, computers, and other consumer markets. This TVS diode is suited for ESD protection for data and USB port, serial port, audio ports, VCC lines and control lines. This TVS diode is capable of clamping the ESD peaks up to two-kV (air-gap-discharge) and one-kV (contact-discharge) when placed in its SO-323 package.

Working Principle

This TVS diode is fabricated with an extremely thin layer of highly doped silicon. The semiconductor material used in these devices is designed so that it is highly conductive when a certain voltage is applied. When a voltage higher than the specified peak working voltage of 5V is applied, the device is able to withstand the voltage and breakdown. When the voltage exceeds the peak working voltage, the high voltage will cause the current to flow through the device and the energy is dissipated in the TVS diode as a result of the voltage-current characteristics.

The TVS diode is able to withstand transient current up to the rated peak pulse current of 5A. When the current reaches 5A, the device becomes highly conductive and the current flows through the device until the voltage is less than the peak working voltage, at which point the device becomes non-conductive again. This process allows the device to protect the equipment from damage due to the high current surge.

The 1N5655A is a unidirectional device, which means that it only allows current to flow in one direction. This means that the TVS diode is effective at protecting against ESD and lightning strikes, and it can also be used to protect against reverse bias conditions. The device is designed to help protect against electrostatic discharges and reverse bias events by clamping the voltage at the peak working voltage of 5V.

Given its wide application field, the 1N5655A is a highly useful component for a variety of applications. It is a cost-effective way to protect against high voltage and transient current and can help to maintain the integrity of critical systems. The device is offered in the small SOD-323 packaging which makes it easy to integrate into PCB designs for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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